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STW12N120K5
+BOMMOSFET N-CH 1200V 12A TO247
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STW12N120K5
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데이터시트 STW12N120K5 DataSheet
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패키지 TO-247
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Series | MDmesh™ K5 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1370 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
개요
Description
The STW12N120K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics. Part of the MDmesh™ K5 series, this MOSFET is optimized for high efficiency and fast switching applications. It features a drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 12A, making it suitable for demanding applications such as power supplies, converters, and other industrial systems.
The device offers low on-resistance (R_DS(on)) and utilizes advanced technology to reduce energy losses and improve performance. It also provides high avalanche ruggedness and low gate charge, which helps enhance the overall efficiency and reliability of electronic systems.
With its robust design, the STW12N120K5 is ideal for applications requiring high power density and efficient energy conversion. It is typically packaged in a TO-247 form factor, facilitating easy integration into existing designs. Overall, this MOSFET is a versatile component for engineers looking to optimize high-performance power systems.
The device offers low on-resistance (R_DS(on)) and utilizes advanced technology to reduce energy losses and improve performance. It also provides high avalanche ruggedness and low gate charge, which helps enhance the overall efficiency and reliability of electronic systems.
With its robust design, the STW12N120K5 is ideal for applications requiring high power density and efficient energy conversion. It is typically packaged in a TO-247 form factor, facilitating easy integration into existing designs. Overall, this MOSFET is a versatile component for engineers looking to optimize high-performance power systems.
Equivalent
The STW12N120K5 is a 1200V, 12A N-channel MOSFET from STMicroelectronics. Equivalent products may include:
1. Infineon IPW60R120P7
2. ON Semiconductor FDPF12N60NZ
3. Vishay IRFP460LC
4. Fairchild FQA12P20
These equivalents offer similar voltage and current ratings but ensure to verify the specific electrical characteristics and thermal performance for compatibility in your application.
1. Infineon IPW60R120P7
2. ON Semiconductor FDPF12N60NZ
3. Vishay IRFP460LC
4. Fairchild FQA12P20
These equivalents offer similar voltage and current ratings but ensure to verify the specific electrical characteristics and thermal performance for compatibility in your application.
Features
The STW12N120K5 is a high-voltage N-channel Power MOSFET designed for applications requiring high efficiency and reliability. Key features of the STW12N120K5 include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 1200V, allowing it to handle high voltage levels, and a continuous drain current (I_D) of 11A at a temperature of 25°C.
2. R_DS(on): The on-resistance is low, typically around 0.95 ohms, which helps reduce conduction losses.
3. Fast Switching: The device is designed for fast switching applications, which enhances efficiency in high-frequency circuits.
4. Thermal Performance: It comes in a TO-247 package, which provides good thermal management capabilities.
5. Robust Design: Built with ruggedness in mind, it offers high avalanche energy capability, making it suitable for various demanding applications.
6. Applications: Commonly used in industrial power supplies, high-voltage converters, and motor control applications.
These features make it suitable for use in hard switching topologies and for improving overall energy efficiency in power electronics.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 1200V, allowing it to handle high voltage levels, and a continuous drain current (I_D) of 11A at a temperature of 25°C.
2. R_DS(on): The on-resistance is low, typically around 0.95 ohms, which helps reduce conduction losses.
3. Fast Switching: The device is designed for fast switching applications, which enhances efficiency in high-frequency circuits.
4. Thermal Performance: It comes in a TO-247 package, which provides good thermal management capabilities.
5. Robust Design: Built with ruggedness in mind, it offers high avalanche energy capability, making it suitable for various demanding applications.
6. Applications: Commonly used in industrial power supplies, high-voltage converters, and motor control applications.
These features make it suitable for use in hard switching topologies and for improving overall energy efficiency in power electronics.
Pinout
The STW12N120K5 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. It typically comes in a TO-247 package, which has three pins.
Here is the pin count and function:
1. Pin 1 - Gate (G): The gate terminal is used to control the MOSFET. A voltage applied to this pin will allow current to flow between the drain and source.
2. Pin 2 - Drain (D): The drain terminal is the output side of the MOSFET, where the main current flows out from when the device is in the 'on' state.
3. Pin 3 - Source (S): The source terminal is the input side where current enters the MOSFET.
The STW12N120K5 is used in applications requiring high voltage and fast switching capabilities, such as in power supplies and converters.
Here is the pin count and function:
1. Pin 1 - Gate (G): The gate terminal is used to control the MOSFET. A voltage applied to this pin will allow current to flow between the drain and source.
2. Pin 2 - Drain (D): The drain terminal is the output side of the MOSFET, where the main current flows out from when the device is in the 'on' state.
3. Pin 3 - Source (S): The source terminal is the input side where current enters the MOSFET.
The STW12N120K5 is used in applications requiring high voltage and fast switching capabilities, such as in power supplies and converters.
Manufacturer
The STW12N120K5 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It is headquartered in Geneva, Switzerland, and operates worldwide, providing solutions for various applications including automotive, industrial, personal electronics, and communication equipment. The company is known for its integrated device manufacturer (IDM) model, meaning it handles all steps of the semiconductor production process, from design and manufacturing to sales.
Application
The STW12N120K5 is a high-voltage N-channel MOSFET designed for applications requiring efficient power management and high-speed switching. Its primary application areas include:
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for improved efficiency.
2. Inverters: Suitable for use in DC to AC inverters, particularly in renewable energy systems.
3. Motor Drives: Utilized in motor control applications, including industrial automation and electric vehicles.
4. Lighting: Employed in high-efficiency lighting systems such as LED drivers.
5. Telecommunications: Applicable in power management circuits for telecom infrastructure.
Its features, like low on-resistance and high-speed switching, make it ideal for these applications.
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for improved efficiency.
2. Inverters: Suitable for use in DC to AC inverters, particularly in renewable energy systems.
3. Motor Drives: Utilized in motor control applications, including industrial automation and electric vehicles.
4. Lighting: Employed in high-efficiency lighting systems such as LED drivers.
5. Telecommunications: Applicable in power management circuits for telecom infrastructure.
Its features, like low on-resistance and high-speed switching, make it ideal for these applications.
Package
The STW12N120K5 is typically available in a TO-247 package.
