이미지는 참조용입니다.
STW12NK80Z
+BOMMOSFET N-CH 800V 10.5A TO247-3
-
제조업체ST마이크로일렉트로닉스(주)
-
제조업체 부품 #STW12NK80Z
-
재고8021
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 10.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 750mOhm @ 5.25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 87 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2620 pF @ 25 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
STW12NK80Z is an STMicroelectronics N-channel power IGBT (STW family) designed for high‑voltage, high‑current switching in power electronics.
Key points:
- Type: N‑channel IGBT with an antiparallel diode
- Voltage/current: rated for high voltage (hundreds to about 1 kV) and tens of amps
- Performance: fast switching suitable for PWM, with good safety margins and rugged SOA
- Drive: gate must be driven positively relative to emitter (typical full turn‑on around ~15 V; threshold a few volts)
- Packages: available in common power styles (TO‑220, D²PAK, IPAK)
- Applications: motor drives, inverters, solar/industrial power supplies, welding equipment
Note: exact electrical specs (Vce, Ic, Rds(on), switching times, thermal ratings) vary by variant. Check the datasheet for precise numbers, safe‑operating‑area, and thermal data for your design.
Key points:
- Type: N‑channel IGBT with an antiparallel diode
- Voltage/current: rated for high voltage (hundreds to about 1 kV) and tens of amps
- Performance: fast switching suitable for PWM, with good safety margins and rugged SOA
- Drive: gate must be driven positively relative to emitter (typical full turn‑on around ~15 V; threshold a few volts)
- Packages: available in common power styles (TO‑220, D²PAK, IPAK)
- Applications: motor drives, inverters, solar/industrial power supplies, welding equipment
Note: exact electrical specs (Vce, Ic, Rds(on), switching times, thermal ratings) vary by variant. Check the datasheet for precise numbers, safe‑operating‑area, and thermal data for your design.
Equivalent
Do you want cross-references for STW12NK80Z as a 1200 V, ~80 A N‑channel IGBT (likely in TO‑220/TO‑220AB)? If yes, I can list direct equivalents from Infineon, ON Semiconductor, etc. Please specify the exact package and key specs you require (Vce(sat), Ic, switching speed, etc.).
Features
STW12NK80Z features (concise):
- N-channel enhancement-mode power MOSFET
- Vds: 800 V (high-voltage)
- Id: 12 A continuous
- Rds(on): roughly 1.0–1.5 Ω (typical at Vgs = 10 V)
- Gate drive: Vgs ±20 V; gate threshold ~2–4 V
- Fast switching characteristics for SMPS/inverters
- Avalanche-rated with rugged body diode for inductive loads
- Package: typically TO-220/TO-220FP (tab is connected to drain)
- Suitable for high-voltage switching, power supplies, motor drives, and inverters
Note: Always verify exact values (Rds(on), temp/rise, packaging) from the specific datasheet variant you have.
- N-channel enhancement-mode power MOSFET
- Vds: 800 V (high-voltage)
- Id: 12 A continuous
- Rds(on): roughly 1.0–1.5 Ω (typical at Vgs = 10 V)
- Gate drive: Vgs ±20 V; gate threshold ~2–4 V
- Fast switching characteristics for SMPS/inverters
- Avalanche-rated with rugged body diode for inductive loads
- Package: typically TO-220/TO-220FP (tab is connected to drain)
- Suitable for high-voltage switching, power supplies, motor drives, and inverters
Note: Always verify exact values (Rds(on), temp/rise, packaging) from the specific datasheet variant you have.
Pinout
- Pin count: 3 electrical pins (plus the metal tab).
- Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; tab is connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching transistor.
- Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; tab is connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching transistor.
Manufacturer
- Manufacturer: STMicroelectronics (ST).
- What kind of company: A multinational European semiconductor company that designs, manufactures, and sells microelectronics and power devices (ICs, power semiconductors, etc.).
- What kind of company: A multinational European semiconductor company that designs, manufactures, and sells microelectronics and power devices (ICs, power semiconductors, etc.).
Application
STW12NK80Z is an 800 V, 12 A N-channel MOSFET. Application areas include:
- Offline AC-DC adapters and power supplies (front-end, PFC, flyback/forward)
- High-voltage DC-DC converters and resonant/quasi-resonant SMPS
- Half-bridge/full-bridge stages for HV SMPS and motor drives
- UPS, solar inverters and other HV switching power stages
- Industrial drives and other HV switching applications requiring 800 V blocking
- Offline AC-DC adapters and power supplies (front-end, PFC, flyback/forward)
- High-voltage DC-DC converters and resonant/quasi-resonant SMPS
- Half-bridge/full-bridge stages for HV SMPS and motor drives
- UPS, solar inverters and other HV switching power stages
- Industrial drives and other HV switching applications requiring 800 V blocking
Package
TO-220AB (through-hole) package.
