사양
| 속성 | 가치 |
| Package | Tube |
| Series | MDmesh™ M6 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 99mOhm @ 15A, 10V |
| Vgs(th)(Max)@Id | 4.75V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 44.3 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1960 pF @ 100 V |
| PowerDissipation(Max) | 208W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
The STW36N60M6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by STMicroelectronics. It is part of the MDmesh™ M6 series, recognized for its efficiency in high-frequency applications. This MOSFET features a voltage rating of 600V and can handle a continuous current of up to 30A, making it suitable for various power conversion and management applications.
Key characteristics include low gate charge and output capacitance, which contribute to reduced switching losses and higher efficiency. Its optimized design enables improved performance in hard and soft switching topologies, making it ideal for use in resonant converters, power supplies, and motor control systems.
The STW36N60M6 is housed in a TO-247 package, which provides effective thermal performance and reliability. The device's design prioritizes energy efficiency, promoting reduced energy consumption in electronic systems. The combination of robust design and advanced technology makes it a practical choice for engineers looking to enhance the efficiency of their power conversion solutions.
Key characteristics include low gate charge and output capacitance, which contribute to reduced switching losses and higher efficiency. Its optimized design enables improved performance in hard and soft switching topologies, making it ideal for use in resonant converters, power supplies, and motor control systems.
The STW36N60M6 is housed in a TO-247 package, which provides effective thermal performance and reliability. The device's design prioritizes energy efficiency, promoting reduced energy consumption in electronic systems. The combination of robust design and advanced technology makes it a practical choice for engineers looking to enhance the efficiency of their power conversion solutions.
Equivalent
The STW36N60M6 is a 600V, 36A N-channel MOSFET. Equivalent products include:
1. Infineon IPW60R037C6
2. Vishay IRFP460
3. ON Semiconductor FCP190N60
4. Fairchild (now ON Semiconductor) FDP18N50
5. Toshiba TK31A60W
These alternatives may have slight variations in parameters, so it's important to review their datasheets to ensure compatibility with your specific application.
1. Infineon IPW60R037C6
2. Vishay IRFP460
3. ON Semiconductor FCP190N60
4. Fairchild (now ON Semiconductor) FDP18N50
5. Toshiba TK31A60W
These alternatives may have slight variations in parameters, so it's important to review their datasheets to ensure compatibility with your specific application.
Features
The STW36N60M6 is a power MOSFET from STMicroelectronics, designed for high-efficiency power conversion applications. Here are its key features:
1. VDSS: It has a drain-source voltage rating of 600V, suitable for medium to high voltage applications.
2. ID: The continuous drain current is 36A, allowing it to handle substantial current loads.
3. RDS(on): The on-resistance is approximately 0.09 ohms, contributing to reduced conduction losses.
4. Technology: It utilizes MDmesh™ M6 technology, which provides improved efficiency, switching performance, and lower gate charge.
5. Package: Available in a TO-247 package, offering good thermal performance and ease of mounting.
6. Applications: Typically used in applications like power supplies, converters, motor control, and inverters.
7. Switching Speed: Fast switching capabilities for efficient performance in high-frequency operations.
8. Reliability: Designed for robustness with high avalanche ruggedness.
This MOSFET is ideal for scenarios where efficiency, high voltage, and current handling are critical.
1. VDSS: It has a drain-source voltage rating of 600V, suitable for medium to high voltage applications.
2. ID: The continuous drain current is 36A, allowing it to handle substantial current loads.
3. RDS(on): The on-resistance is approximately 0.09 ohms, contributing to reduced conduction losses.
4. Technology: It utilizes MDmesh™ M6 technology, which provides improved efficiency, switching performance, and lower gate charge.
5. Package: Available in a TO-247 package, offering good thermal performance and ease of mounting.
6. Applications: Typically used in applications like power supplies, converters, motor control, and inverters.
7. Switching Speed: Fast switching capabilities for efficient performance in high-frequency operations.
8. Reliability: Designed for robustness with high avalanche ruggedness.
This MOSFET is ideal for scenarios where efficiency, high voltage, and current handling are critical.
Pinout
The STW36N60M6 is a power MOSFET designed by STMicroelectronics. It is part of the MDmesh™ M6 series, known for high efficiency and low conduction losses. This MOSFET is typically used in applications such as power supplies, converters, motor drives, and other high-efficiency power systems.
In terms of pin count, the STW36N60M6 is housed in a TO-247 package, which typically features three pins. These pins are:
1. Gate (G): This pin is used to control the MOSFET's switching state by applying a voltage to it.
2. Drain (D): This is the main terminal for the input current, connected to the load.
3. Source (S): This pin acts as the return path for the current, typically connected to ground.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and can handle continuous drain current up to 36A, making it suitable for high-voltage and high-current applications.
In terms of pin count, the STW36N60M6 is housed in a TO-247 package, which typically features three pins. These pins are:
1. Gate (G): This pin is used to control the MOSFET's switching state by applying a voltage to it.
2. Drain (D): This is the main terminal for the input current, connected to the load.
3. Source (S): This pin acts as the return path for the current, typically connected to ground.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and can handle continuous drain current up to 36A, making it suitable for high-voltage and high-current applications.
Manufacturer
The STW36N60M6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including discrete and power devices, integrated circuits, and microcontrollers. The company serves various industries, such as automotive, industrial, personal electronics, and communications equipment. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its expertise in analog and mixed-signal technologies, power applications, and microelectromechanical systems (MEMS).
Application
The STW36N60M6 is a MOSFET designed for high-efficiency power conversion and management. Its primary application areas include:
1. Switching Power Supplies: Utilized in AC-DC and DC-DC converters for efficient power regulation.
2. Motor Drives: Used in motor control applications for industrial and consumer electronics.
3. Lighting Systems: Applied in LED drivers and HID lighting systems for energy-efficient lighting solutions.
4. Renewable Energy: Employed in solar inverters and wind turbine systems to enhance energy conversion.
5. Uninterruptible Power Supplies (UPS): Provides reliable power management in UPS systems.
6. Telecommunications: Used in base stations and network power supplies for stable operation.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
1. Switching Power Supplies: Utilized in AC-DC and DC-DC converters for efficient power regulation.
2. Motor Drives: Used in motor control applications for industrial and consumer electronics.
3. Lighting Systems: Applied in LED drivers and HID lighting systems for energy-efficient lighting solutions.
4. Renewable Energy: Employed in solar inverters and wind turbine systems to enhance energy conversion.
5. Uninterruptible Power Supplies (UPS): Provides reliable power management in UPS systems.
6. Telecommunications: Used in base stations and network power supplies for stable operation.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
Package
The STW36N60M6 is a power MOSFET from STMicroelectronics, and it is typically offered in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal performance and ease of mounting.
