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STW45NM50
+BOMMOSFET N-CH 500V 45A TO247-3
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STW45NM50
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데이터시트 STW45NM50 DataSheet
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사양
| 속성 | 가치 |
| Series | MDmesh™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 100mOhm @ 22.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 117 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3700 pF @ 25 V |
| PowerDissipation(Max) | 417W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | TO-247-3 |
| BaseProductNumber | STW45 |
개요
Description
The STW45NM50 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications, particularly in switch-mode power supplies and industrial equipment. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 45A, making it suitable for high-voltage applications.
The device offers low on-resistance (R_DS(on)), typically around 0.15 Ohms, which minimizes conduction losses and improves overall efficiency. Its fast switching capabilities enhance performance in high-frequency applications. The STW45NM50 is packaged in an TO-220 format, providing excellent thermal performance and heat dissipation.
Key parameters include a maximum gate-source voltage (V_GS) of ±20V, making it compatible with standard gate drive circuits. It is widely used in power converters, inverters, motor drives, and other systems requiring efficient switching and thermal management. Overall, the STW45NM50 is a reliable choice for engineers seeking robust MOSFET solutions for demanding power applications.
The device offers low on-resistance (R_DS(on)), typically around 0.15 Ohms, which minimizes conduction losses and improves overall efficiency. Its fast switching capabilities enhance performance in high-frequency applications. The STW45NM50 is packaged in an TO-220 format, providing excellent thermal performance and heat dissipation.
Key parameters include a maximum gate-source voltage (V_GS) of ±20V, making it compatible with standard gate drive circuits. It is widely used in power converters, inverters, motor drives, and other systems requiring efficient switching and thermal management. Overall, the STW45NM50 is a reliable choice for engineers seeking robust MOSFET solutions for demanding power applications.
Equivalent
Equivalent products to the STW45NM50 MOSFET include the IRF3205, IRF540, and FQP50N06. Other alternatives may be the BUK9545-55, and the K2710. Always verify the specifications such as voltage, current rating, Rds(on), and package type to ensure compatibility for your specific application.
Features
The STW45NM50 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 45A, which supports robust performance in power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.15 ohms, minimizing power losses during operation.
4. Fast Switching: It offers fast switching capabilities, enhancing efficiency in switch-mode power supplies and converters.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides reliable operation under varying thermal conditions.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for effective control with standard logic levels.
7. TO-220 Package: Housed in a TO-220 package, it allows for easy heat dissipation and mounting.
These features make the STW45NM50 ideal for applications in power management, automotive, and industrial sectors.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 45A, which supports robust performance in power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.15 ohms, minimizing power losses during operation.
4. Fast Switching: It offers fast switching capabilities, enhancing efficiency in switch-mode power supplies and converters.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides reliable operation under varying thermal conditions.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for effective control with standard logic levels.
7. TO-220 Package: Housed in a TO-220 package, it allows for easy heat dissipation and mounting.
These features make the STW45NM50 ideal for applications in power management, automotive, and industrial sectors.
Pinout
The STW45NM50 is a N-channel MOSFET designed for use in high-voltage applications. It has a total of 5 pins, which are typically configured as follows:
1. Gate (G) - Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - The terminal where the load is connected. Current flows out of the drain when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or the negative side of the power supply. Current flows into the source when the device is on.
4. Bulk (B) - Also known as the substrate, it is often internally connected to the source for N-channel devices.
5. Tab/Heat Sink - Typically connected to the source and used for heat dissipation.
This MOSFET supports a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 45A, making it suitable for applications like power supplies and motor drivers.
1. Gate (G) - Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - The terminal where the load is connected. Current flows out of the drain when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or the negative side of the power supply. Current flows into the source when the device is on.
4. Bulk (B) - Also known as the substrate, it is often internally connected to the source for N-channel devices.
5. Tab/Heat Sink - Typically connected to the source and used for heat dissipation.
This MOSFET supports a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 45A, making it suitable for applications like power supplies and motor drivers.
Manufacturer
The STW45NM50 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including discrete devices, microcontrollers, and integrated circuits. Founded in 1987 through a merger of SGS Microelettronica of Italy and Thomson Semiconducteurs of France, the company has a strong presence in various markets such as automotive, industrial, personal electronics, and communication.
The STW45NM50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various high-voltage applications, known for its high efficiency and performance in power management and conversion tasks. STMicroelectronics is recognized for its commitment to innovation and sustainability, investing heavily in research and development to stay at the forefront of technology in the semiconductor industry. The company operates globally, with facilities for research, design, and manufacturing in multiple countries, making it a key player in the electronics supply chain.
The STW45NM50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various high-voltage applications, known for its high efficiency and performance in power management and conversion tasks. STMicroelectronics is recognized for its commitment to innovation and sustainability, investing heavily in research and development to stay at the forefront of technology in the semiconductor industry. The company operates globally, with facilities for research, design, and manufacturing in multiple countries, making it a key player in the electronics supply chain.
Application
The STW45NM50 is a high-voltage N-channel MOSFET commonly used in various applications, including:
1. Switching Power Supplies: For efficient power conversion in adapters and chargers.
2. Motor Drives: In industrial and automotive applications for controlling electric motors.
3. DC-DC Converters: For voltage regulation in renewable energy systems and battery management.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
5. Home Appliances: For power switching in devices like refrigerators and air conditioners.
Its high voltage and current capabilities make it suitable for demanding power applications.
1. Switching Power Supplies: For efficient power conversion in adapters and chargers.
2. Motor Drives: In industrial and automotive applications for controlling electric motors.
3. DC-DC Converters: For voltage regulation in renewable energy systems and battery management.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
5. Home Appliances: For power switching in devices like refrigerators and air conditioners.
Its high voltage and current capabilities make it suitable for demanding power applications.
Package
The STW45NM50 is typically available in a TO-220 package type. This package is designed for easy heat dissipation and is commonly used for power MOSFETs.
