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STW70N60DM2
+BOMMOSFET N-CH 600V 66A TO247
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #STW70N60DM2
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데이터시트 STW70N60DM2 DataSheet
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패키지 TO-247
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사양
| 속성 | 가치 |
| Package | Tube |
| Series | MDmesh™ DM2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 66A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 42mOhm @ 33A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 121 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 5508 pF @ 100 V |
| PowerDissipation(Max) | 446W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
개요
Description
Key features of the STW70N60DM2 include low gate charge and reduced on-resistance, which contribute to minimizing power losses and improving overall system efficiency. The device also benefits from a fast recovery body diode, enhancing performance in hard-switching environments. Additionally, it comes in a TO-247 package, which provides good thermal performance and easy integration into power circuits.
Overall, the STW70N60DM2 is designed to deliver high performance and reliability in demanding power management applications, while also supporting energy-efficient operation.
Equivalent
1. IRFP460 - from Infineon Technologies.
2. FQA70N10 - from ON Semiconductor.
3. APT60M60JLL - from Microsemi (now part of Microchip Technology).
4. IXFH80N075 - from IXYS (part of Littelfuse).
Always verify specifications such as voltage, current, and package compatibility when selecting equivalents.
Features
1. Voltage Rating: It has a drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_d) is 70A, allowing it to handle significant power loads.
3. Technology: Built on MDmesh DM2 technology, it offers low on-resistance and fast switching speeds, enhancing overall efficiency.
4. R_DS(on): The device features a low on-state resistance, minimizing conduction losses.
5. Switching Performance: Optimized for low switching losses, it supports rapid on/off operations, which is ideal for high-frequency applications.
6. Thermal Performance: Encased in a TO-247 package, it offers efficient heat dissipation, which is crucial for high-power applications.
7. Applications: Commonly used in power supply designs, converters, inverters, and motor control systems.
8. Protection: Incorporates avalanche and dv/dt ruggedness for enhanced reliability.
These features make the STW70N60DM2 a robust choice for demanding electrical and electronic applications.
Pinout
1. Gate (G): This is the input terminal used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and the source.
2. Drain (D): This is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is typically connected to the ground or negative side of the power supply in a circuit.
The STW70N60DM2 is designed for high-efficiency switching applications and is commonly used in power conversion and amplification circuits. Its specifications typically include high voltage and current ratings, making it suitable for heavy-duty applications.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Applied in motor drivers for industrial and automotive applications.
3. Battery Chargers: Utilized in chargers for high-efficiency charging.
4. Inverters: Suitable for DC-AC conversion in solar inverters and UPS systems.
5. Lighting: Employed in LED and HID lighting for energy efficiency.
6. Telecommunications: Used in telecom power systems for effective power management.
7. Automotive: Implemented in electric and hybrid vehicles for various power control applications.
These applications leverage the MOSFET's ability to handle high voltage and current efficiently.