이미지는 참조용입니다.
STW70N65DM6
+BOMMOSFET N-CH 650V 68A TO247
-
제조업체ST마이크로일렉트로닉스(주)
-
제조업체 부품 #STW70N65DM6
-
데이터시트 STW70N65DM6 DataSheet
-
재고3184
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Series | MDmesh™ DM6 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 68A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 40mOhm @ 34A, 10V |
| Vgs(th)(Max)@Id | 4.75V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 125 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4900 pF @ 100 V |
| PowerDissipation(Max) | 450W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | TO-247-3 |
| BaseProductNumber | STW70 |
개요
Description
The STW70N65DM6 is a high-performance N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 70A at a temperature of 25°C. The device is optimized for high-speed switching and has a low on-resistance (Rds(on)), typically around 0.08Ω, which enhances efficiency and reduces power loss during operation.
This MOSFET is particularly suited for use in power supplies, motor control, and other high-voltage applications. It also incorporates advanced thermal management features, allowing it to operate effectively under challenging conditions. The STW70N65DM6 is packaged in a TO-220 form factor, facilitating easy heat dissipation.
Key parameters include a gate-source threshold voltage (Vgs(th)) of 2-4V and a total gate charge (Qg) of 70nC, making it suitable for driving circuits in modern switching power supplies. Overall, its robust specifications make the STW70N65DM6 an ideal choice for engineers seeking reliability and efficiency in power electronics designs.
This MOSFET is particularly suited for use in power supplies, motor control, and other high-voltage applications. It also incorporates advanced thermal management features, allowing it to operate effectively under challenging conditions. The STW70N65DM6 is packaged in a TO-220 form factor, facilitating easy heat dissipation.
Key parameters include a gate-source threshold voltage (Vgs(th)) of 2-4V and a total gate charge (Qg) of 70nC, making it suitable for driving circuits in modern switching power supplies. Overall, its robust specifications make the STW70N65DM6 an ideal choice for engineers seeking reliability and efficiency in power electronics designs.
Equivalent
The STW70N65DM6 is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF320, IRF3710, and BUK7YB65-55. Other alternatives might be the FDP70N65, AUIRFG9N65, and MMBF170. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility.
Features
The STW70N65DM6 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 70A, allowing it to handle substantial load requirements.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of about 0.24Ω at V_GS = 10V, resulting in reduced conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: It is available in a TO-247 package, which facilitates efficient heat dissipation.
6. Fast Switching Speed: The device offers fast switching capabilities, suitable for applications like power supplies and motor drives.
7. Safe Operating Area: It comes with a robust safe operating area (SOA), ensuring reliable performance under various conditions.
These features make the STW70N65DM6 a popular choice for power electronics designers.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 70A, allowing it to handle substantial load requirements.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of about 0.24Ω at V_GS = 10V, resulting in reduced conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: It is available in a TO-247 package, which facilitates efficient heat dissipation.
6. Fast Switching Speed: The device offers fast switching capabilities, suitable for applications like power supplies and motor drives.
7. Safe Operating Area: It comes with a robust safe operating area (SOA), ensuring reliable performance under various conditions.
These features make the STW70N65DM6 a popular choice for power electronics designers.
Pinout
The STW70N65DM6 is an N-channel MOSFET with a pin count of 4. It is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 70A.
The pin configuration and their respective functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connected to the load; current flows from drain to source when turned on.
3. Source (S): Connected to ground or the negative side of the power supply; current flows out from source when the MOSFET is active.
4. Bulk (B): Internal connection used for device substrate; often tied to the source.
This MOSFET is suitable for various applications, including switch-mode power supplies and converters, due to its low on-resistance and fast switching capabilities.
The pin configuration and their respective functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connected to the load; current flows from drain to source when turned on.
3. Source (S): Connected to ground or the negative side of the power supply; current flows out from source when the MOSFET is active.
4. Bulk (B): Internal connection used for device substrate; often tied to the source.
This MOSFET is suitable for various applications, including switch-mode power supplies and converters, due to its low on-resistance and fast switching capabilities.
Manufacturer
The STW70N65DM6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including power devices, microcontrollers, and integrated circuits. The company serves various sectors such as automotive, industrial, and consumer electronics, and is known for its innovation in technologies like power management and sensor solutions. STMicroelectronics operates worldwide, providing both standard and custom semiconductor solutions to meet diverse customer needs.
Application
The STW70N65DM6 is a high-voltage N-channel MOSFET primarily used in various power applications. Key application areas include:
1. Switching Power Supplies: Efficiently manages power conversion and regulation.
2. Motor Drives: Controls and drives electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in step-down or step-up conversion circuits.
4. Inverters: Converts DC to AC for renewable energy systems, like solar inverters.
5. Audio Amplifiers: Enhances performance in high-power audio applications.
6. Lighting Control: Used in LED drivers and lighting systems.
Its high voltage and current ratings make it suitable for demanding environments.
1. Switching Power Supplies: Efficiently manages power conversion and regulation.
2. Motor Drives: Controls and drives electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in step-down or step-up conversion circuits.
4. Inverters: Converts DC to AC for renewable energy systems, like solar inverters.
5. Audio Amplifiers: Enhances performance in high-power audio applications.
6. Lighting Control: Used in LED drivers and lighting systems.
Its high voltage and current ratings make it suitable for demanding environments.
Package
The STW70N65DM6 is packaged in a TO-220 case.
