사양
| 속성 | 가치 |
| Package / Case | Tray |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
개요
Description
The TH58BVG2S3HTAI0 is a model number typically associated with NAND flash memory products, particularly those manufactured by Kioxia, formerly known as Toshiba Memory. These flash memory products are used in various electronic devices for data storage, including solid-state drives (SSDs), mobile devices, and other digital applications.
This specific model might refer to a Multi-Level Cell (MLC) NAND flash, which offers a balance between performance, endurance, and cost. MLC NAND stores two bits per cell, allowing for greater storage density compared to Single-Level Cell (SLC) NAND, which stores only one bit per cell. However, MLC typically has lower endurance and performance than SLC.
The TH58BVG2S3HTAI0 would generally be part of a larger system where it interfaces with a controller that manages data reading and writing processes, wear leveling, and error correction to ensure data integrity and longevity. As NAND technology continues to evolve, models like this are part of the ongoing improvement in flash memory capacities, speeds, and efficiencies, catering to the ever-growing demand for data storage solutions.
This specific model might refer to a Multi-Level Cell (MLC) NAND flash, which offers a balance between performance, endurance, and cost. MLC NAND stores two bits per cell, allowing for greater storage density compared to Single-Level Cell (SLC) NAND, which stores only one bit per cell. However, MLC typically has lower endurance and performance than SLC.
The TH58BVG2S3HTAI0 would generally be part of a larger system where it interfaces with a controller that manages data reading and writing processes, wear leveling, and error correction to ensure data integrity and longevity. As NAND technology continues to evolve, models like this are part of the ongoing improvement in flash memory capacities, speeds, and efficiencies, catering to the ever-growing demand for data storage solutions.
Equivalent
The TH58BVG2S3HTAI0 is a NAND flash memory chip from Toshiba (now Kioxia). Equivalent products from other manufacturers might include:
1. Micron: MT29F series (e.g., MT29F2G08ABAEAWP)
2. Samsung: K9GAG08U0E or similar models
3. SK Hynix: H27UCG8T2E5R
4. Western Digital/SanDisk: SDTNRGAMA series
These equivalents may have similar specifications but ensure compatibility by consulting datasheets and technical documentation.
1. Micron: MT29F series (e.g., MT29F2G08ABAEAWP)
2. Samsung: K9GAG08U0E or similar models
3. SK Hynix: H27UCG8T2E5R
4. Western Digital/SanDisk: SDTNRGAMA series
These equivalents may have similar specifications but ensure compatibility by consulting datasheets and technical documentation.
Features
The TH58BVG2S3HTAI0 is a NAND flash memory chip produced by Kioxia, formerly known as Toshiba Memory Corporation. It's designed for a variety of storage applications. Here are some key features:
1. Type: It is a 3D TLC (Triple-Level Cell) NAND flash memory, which means it stores 3 bits of data per cell, offering a balance between performance and cost.
2. Capacity: This particular model typically comes in capacities that are suitable for consumer electronics, SSDs, and other storage solutions.
3. Interface: It uses a standard interface for NAND flash memory, which ensures compatibility with a wide range of devices.
4. Performance: Offers good read and write speeds suitable for consumer and industrial applications, though specifics will depend on the implementation.
5. Endurance: TLC NAND has moderate endurance, suitable for general-purpose storage needs.
6. Packaging: Available in a small form factor, allowing for integration into compact devices.
7. Use Case: Ideal for use in SSDs, smartphones, tablets, and other devices requiring reliable and cost-effective storage solutions.
Note that exact specifications may vary based on the production batch and specific model configuration.
1. Type: It is a 3D TLC (Triple-Level Cell) NAND flash memory, which means it stores 3 bits of data per cell, offering a balance between performance and cost.
2. Capacity: This particular model typically comes in capacities that are suitable for consumer electronics, SSDs, and other storage solutions.
3. Interface: It uses a standard interface for NAND flash memory, which ensures compatibility with a wide range of devices.
4. Performance: Offers good read and write speeds suitable for consumer and industrial applications, though specifics will depend on the implementation.
5. Endurance: TLC NAND has moderate endurance, suitable for general-purpose storage needs.
6. Packaging: Available in a small form factor, allowing for integration into compact devices.
7. Use Case: Ideal for use in SSDs, smartphones, tablets, and other devices requiring reliable and cost-effective storage solutions.
Note that exact specifications may vary based on the production batch and specific model configuration.
Pinout
The TH58BVG2S3HTAI0 is a NAND Flash memory chip produced by Toshiba. It typically comes in a TSOP (Thin Small-Outline Package) with 48 pins. The primary functions and pin assignments for this type of NAND Flash include:
1. Power Supply Pins: VCC (power supply) and VSS (ground).
2. I/O Pins: These are used for data input/output operations.
3. Control Pins: Includes CLE (Command Latch Enable), ALE (Address Latch Enable), WE# (Write Enable), RE# (Read Enable), and CE# (Chip Enable).
4. R/B# (Ready/Busy): Indicates the state of the NAND device, whether it is busy or ready for the next operation.
5. WP# (Write Protect): Used to protect against accidental writes.
These pins work together to enable the reading, writing, and erasing of data stored in the NAND Flash, and they play crucial roles in the chip's operation by managing commands, addresses, and data flow. For detailed specifications, always refer to the official datasheet from the manufacturer.
1. Power Supply Pins: VCC (power supply) and VSS (ground).
2. I/O Pins: These are used for data input/output operations.
3. Control Pins: Includes CLE (Command Latch Enable), ALE (Address Latch Enable), WE# (Write Enable), RE# (Read Enable), and CE# (Chip Enable).
4. R/B# (Ready/Busy): Indicates the state of the NAND device, whether it is busy or ready for the next operation.
5. WP# (Write Protect): Used to protect against accidental writes.
These pins work together to enable the reading, writing, and erasing of data stored in the NAND Flash, and they play crucial roles in the chip's operation by managing commands, addresses, and data flow. For detailed specifications, always refer to the official datasheet from the manufacturer.
Manufacturer
The TH58BVG2S3HTAI0 is a NAND flash memory chip manufactured by Kioxia Corporation. Kioxia is a Japanese company that specializes in the development, production, and sale of flash memory and solid-state drives (SSDs). It was formerly part of Toshiba Memory Corporation, which was spun off from Toshiba Corporation. Kioxia is known for its innovation in memory solutions and plays a significant role in the storage industry, providing products used in a wide range of consumer electronics, data centers, and enterprise applications.
Application
The TH58BVG2S3HTAI0 is a NAND flash memory chip commonly used in various applications requiring reliable data storage. It is suitable for consumer electronics like smartphones, tablets, and digital cameras, providing efficient storage solutions. Additionally, it is used in solid-state drives (SSDs) for laptops and PCs, enhancing data access speeds. The chip is also applicable in industrial devices and embedded systems, where robust data retention and endurance are crucial. Its compact size and performance make it suitable for portable devices and IoT applications, where space and power efficiency are important.
Package
The TH58BVG2S3HTAI0 is a NAND flash memory chip produced by Toshiba (now Kioxia). It typically comes in a Ball Grid Array (BGA) package, which is compact and ideal for high-performance applications.
