UCC27211DDAR

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UCC27211DDAR

+BOM

IC GATE DRVR HALF-BRIDGE 8SOPWR

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  • 제조업체 부품 #UCC27211DDAR

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사양

속성 가치
Part Status Active
Base Product Number UCC27211
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 8V ~ 17V
Logic Voltage - VIL, VIH 1.3V, 2.8V
Current - Peak Output (Source, Sink) 4A, 4A
Input Type Non-Inverting
Rise / Fall Time (Typ) 7.2ns, 5.5ns
Operating Temperature -40°C ~ 140°C (TJ)
Mounting Type Surface Mount
Package 8-PowerSOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO PowerPad
Packaging Bulk, Cut Tape (CT), Tape & Reel (TR)
High Side Voltage - Max (Bootstrap) 120 V

개요

Description

The UCC27211DDAR is a high-speed, high-voltage gate driver designed for driving N-channel MOSFETs and IGBTs in various power applications. Manufactured by Texas Instruments, this device is part of the UCC27211 family, known for its ability to handle up to 120 V on the supply voltage. The driver features a 4 A peak source and 4 A peak sink current capability, providing fast switching performance crucial for high-frequency applications. It includes a dual-channel configuration that supports both high-side and low-side driving, improving efficiency in half-bridge, full-bridge, and synchronous buck or boost converters.
Key features include a bootstrap diode, low propagation delay, and a wide operating temperature range, making it versatile for industrial and consumer applications. The UCC27211DDAR is housed in a thermally enhanced SOIC package with a PowerPAD, ensuring effective heat dissipation. Its robust design offers high noise immunity and reliable operation in challenging environments. This gate driver is ideal for applications requiring efficient, high-power conversion, such as motor drives, power supplies, and renewable energy systems.

Equivalent

The UCC27211DDAR is a high-frequency, high-side and low-side driver. Equivalent products include:
1. IR2110 from Infineon Technologies
2. ISL2111 from Renesas Electronics
3. FAN7390 from ON Semiconductor
4. ADuM3220 from Analog Devices
5. MCP14E8 from Microchip Technology
These alternatives offer similar functionalities for driving MOSFETs and IGBTs in various applications, but differences in specifications should be considered based on your specific requirements.

Features

The UCC27211DDAR is a high-frequency N-channel MOSFET driver from Texas Instruments. Key features include:
1. High-Speed Capability: It supports fast switching with propagation delays typically around 20 ns, making it suitable for high-frequency applications.
2. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces the need for external components.
3. Wide Operating Range: It operates over a wide voltage range from 8 V to 17 V, accommodating various power supply levels.
4. Output Drive Capability: It can provide a peak sourcing current of 4 A and a peak sinking current of 4 A, ensuring efficient driving of power MOSFETs.
5. Undervoltage Lockout (UVLO): The device features UVLO protection on both low-side and high-side drivers to prevent malfunction during low voltage conditions.
6. Thermal Shutdown Protection: This feature helps prevent overheating and potential damage to the device.
7. Small Package: Available in a compact SOIC-8 package, the UCC27211DDAR is suitable for space-constrained applications.
These features make the UCC27211DDAR ideal for use in DC/DC converters, motor drives, and other power management applications.

Pinout

The UCC27211DDAR is a high-frequency N-channel MOSFET driver IC manufactured by Texas Instruments. It comes in an 8-pin SOIC package. Here's a brief overview of its pin functions:
1. HB (High-Side Bootstrap Supply): Connects to a bootstrap capacitor for high-side MOSFET gate drive.
2. HO (High-Side Output): Drives the gate of the high-side MOSFET.
3. HS (High-Side Floating Supply Return): Connects to the high-side MOSFET source.
4. HI (High-Side Input): Accepts the control signal for the high-side MOSFET.
5. LI (Low-Side Input): Accepts the control signal for the low-side MOSFET.
6. VDD (Supply Voltage): Powers the chip.
7. LO (Low-Side Output): Drives the gate of the low-side MOSFET.
8. COM (Common Ground): Ground reference for the IC.
The UCC27211DDAR is used for driving high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations, providing efficient power conversion with fast switching and low propagation delays.

Manufacturer

The UCC27211DDAR is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a range of electronic products and components. They are known for their development of analog chips and embedded processors, which are used in various applications across industries such as automotive, industrial, electronics, communications, and more. TI is one of the largest semiconductor companies in the world and is recognized for its innovation and contribution to the electronics sector.

Application

The UCC27211DDAR is a high-frequency, high-side and low-side driver designed for applications that require fast switching and efficient power management. Its application areas include:
1. DC-DC Converters: Enhances efficiency in synchronous buck and boost converters.
2. Motor Drives: Suitable for driving high-power motors in industrial and automotive applications.
3. Power Supplies: Used in switch-mode power supplies for improved performance.
4. Class D Audio Amplifiers: Provides efficient power delivery in audio systems.
5. Telecommunications: Supports high-frequency switching in telecom equipment.
6. Solar Inverters: Enhances the efficiency of inverters in solar power systems.
Its reliability and performance make it ideal for systems requiring robust and efficient power delivery.

Package

The UCC27211DDAR is packaged in an 8-pin SO PowerPAD (DDA) package. This type of package is designed for improved thermal performance, featuring an exposed pad for soldering to a heatsink or PCB for efficient heat dissipation.

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