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UMD3NFHATR
+BOMPNP+NPN DIGITAL TRANSISTOR (WITH
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제조업체롬
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제조업체 부품 #UMD3NFHATR
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데이터시트 UMD3NFHATR DataSheet
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패키지 SC-88
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재고3881
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN + PNP |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 10kOhms |
| Resistor - Emitter Base(R2) | 10kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 5mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
개요
Description
Equivalent
Pinout
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Controls the first MOSFET.
3. Source 2 (S2): Connected to the source of the second MOSFET.
4. Drain 2 (D2): Connected to the drain of the second MOSFET.
5. Gate 2 (G2): Controls the second MOSFET.
6. Source 1 (S1): Connected to the source of the first MOSFET.
The MOSFETs are used for applications requiring load switching, DC-DC conversion, and power management in portable devices. Always refer to the datasheet for precise specifications and to ensure the component meets your design requirements.