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UPA1901TE-T1-A
+BOMMOSFETs
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제조업체리사 전자
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제조업체 부품 #UPA1901TE-T1-A
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재고22356
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사양
| 속성 | 가치 |
개요
Description
In general, transistors like this are used for switching or amplification in electronic circuits. The suffix in the model number can denote package type, temperature range, or particular variations in specifications. This component might be used in various applications, including power management, signal processing, or as a part of larger integrated circuits. For precise details, including electrical specifications, typical applications, and pin configurations, one would need to refer to the manufacturer's datasheet. The datasheet is crucial for understanding the component's capabilities, limitations, and best use cases.
Equivalent
1. NXP BUK9Y29-75B
2. ON Semiconductor NTD5867NL
3. Vishay SI4925DDY
4. STMicroelectronics STP55NF06L
These equivalents share similar specifications, but always verify datasheets to ensure compatibility with your specific application.
Features
1. Low On-Resistance: This component exhibits a low on-resistance, which helps improve efficiency by reducing energy loss during conduction.
2. High-Speed Switching: It is capable of fast switching times, making it suitable for applications requiring quick response.
3. Drain-Source Voltage (Vds): It typically supports a high drain-source voltage, allowing it to handle relatively high power.
4. Drain Current (Id): The MOSFET can manage a substantial drain current, which is beneficial for high-power applications.
5. Small Package Size: The component often comes in a compact package, making it ideal for applications where space is limited.
6. Enhanced Thermal Performance: It is designed to dissipate heat efficiently, which extends its operational lifespan and reliability.
7. Applications: It is commonly used in power management, DC-DC converters, motor control, and other applications needing efficient switching.
These features make the UPA1901TE-T1-A a versatile choice for engineers and designers looking for efficient and reliable MOSFETs in their electronic projects.
Pinout
1. Source (S1)
2. Gate (G1)
3. Drain (D1) - internally connected to the tab
4. Source (S1)
5. Source (S2)
6. Gate (G2)
7. Drain (D2) - internally connected to the tab
8. Source (S2)
Each MOSFET within the package has its own gate and source, while the drains are commonly connected internally. This dual N-channel MOSFET configuration is designed for high-speed switching with low on-resistance, making it suitable for efficient power management in various electronic devices.