VNB10N07TR-E

The VNB10N07TR-E is a high-performance N-channel MOSFET designed for various power management applications. It features a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) of 10A, making it suitable for medium to high power applications. The device has a low on-resistance (RDS(on)) typically around 10 mΩ, which enhances its efficiency by reducing power loss during operation.
This MOSFET is commonly used in DC-DC converters, motor drivers, and other switching applications due to its rapid switching capabilities and thermal performance. The VNB10N07TR-E is housed in a compact package, which facilitates easier integration into designs with space constraints.
Moreover, it comes with robust protection features, ensuring reliable operation in various environments. The device is ideal for applications in industrial, automotive, and consumer electronics sectors where efficiency and performance are crucial.

The VNB10N07TR-E is a high-side N-channel MOSFET driver. Equivalent products include the AON7400, BTA10-600V, and BSS123. For specific applications, check parameters like voltage, current, and package type to ensure compatibility. Always verify with datasheets for precise specifications.

The VNB10N07TR-E is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 70V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It has a continuous drain current (ID) capability of up to 10A, allowing for efficient power handling.
3. Low On-Resistance: The MOSFET exhibits a low on-resistance (RDS(on)), typically around 0.15Ω at 10V gate drive, which minimizes power loss during operation.
4. Fast Switching Speed: Its design facilitates fast switching speeds, enhancing performance in switching applications.
5. Package Type: It is housed in a TO-220 package, providing excellent thermal performance and ease of heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is typically between 2V and 4V, allowing for compatibility with low-voltage control signals.
These features make the VNB10N07TR-E ideal for applications in power supplies, motor drivers, and other electronic switching tasks.

The VNB10N07TR-E is an N-channel MOSFET designed for automotive and other applications. It has a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET operation, turning it on or off by applying a voltage.
2. Drain (D): This pin connects to the load, allowing current to flow through the device when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the supply, completing the circuit.
The VNB10N07TR-E operates at a maximum continuous drain current of 10A and has a maximum drain-source voltage rating of 75V. It is commonly used in motor control, power management, and automotive applications due to its efficient switching capabilities.

The VNB10N07TR-E is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacturing, and marketing of a wide range of semiconductor products, including microcontrollers, memory chips, sensors, and power management devices. The company serves various industries, such as automotive, industrial, consumer electronics, and communication.
Founded in 1987 through the merger of Italian and French companies, STMicroelectronics has since established itself as a leading player in the semiconductor market. It focuses on innovative technologies, including power and energy management, analog and digital interfaces, and embedded processing. The company is committed to sustainability and developing solutions that enhance energy efficiency and reduce environmental impact.
STMicroelectronics operates globally, with a strong presence in Europe, Asia, and the Americas, and is known for its emphasis on research and development. Their products, like the VNB10N07TR-E, are used in various applications, including motor control, automotive systems, and power switching, making them integral to modern electronic devices.

The VNB10N07TR-E is a MOSFET designed for automotive applications, particularly in power management and control. It is commonly used in motor control, battery management systems, and power distribution units due to its high efficiency and thermal performance. Additionally, it is suitable for applications in LED drivers, DC-DC converters, and other switching applications where low on-resistance and fast switching speeds are essential. Its robust design makes it ideal for harsh automotive environments, ensuring reliability in demanding conditions.

The VNB10N07TR-E is packaged in a TO-220 format. This package type is designed for easy heat dissipation and is commonly used for power devices, providing good thermal performance and mechanical robustness.