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VND5N07TR-E
+BOMIC PWR DRIVER N-CHANNEL 1:1 DPAK
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #VND5N07TR-E
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데이터시트 VND5N07TR-E DataSheet
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패키지 TO-252-3
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재고5936
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 55V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 3.5A |
| RdsOn(Typ) | 200mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
개요
Description
Packaged in a DPAK (TO-252) configuration, the VND5N07TR-E is designed for surface-mount technology, which allows for compact and efficient circuit board designs. It is often used in applications such as DC-DC converters, motor controls, and power regulation systems. The device's superior thermal performance and fast switching capabilities make it a reliable choice for designers seeking to optimize power circuits. Additionally, it offers built-in ESD protection, ensuring durability and longevity in various electronic applications.
Equivalent
1. IRF540N from Infineon (formerly International Rectifier)
2. NTD4906N from ON Semiconductor
3. FDP7030BL from Fairchild Semiconductor (now ON Semiconductor)
Ensure to verify the specifications like voltage rating, current capacity, and package type to confirm compatibility with your application.
Features
1. N-channel MOSFET: Provides efficient switching and conduction.
2. Low On-Resistance: Ensures minimal energy loss and high efficiency.
3. Current Limiting: Protects the device and load from excessive current scenarios.
4. Thermal Shutdown: Automatically turns off the MOSFET when temperature exceeds specified limits, preventing overheating damage.
5. ESD Protection: Safeguards the device against electrostatic discharge.
6. Compact Package: Comes in a surface-mount package suitable for space-constrained applications.
7. Automotive Grade: Engineered to meet automotive industry standards for reliability and performance.
These features make the VND5N07TR-E suitable for controlling DC motors, solenoids, and other inductive loads in harsh environments. It is particularly valued for its protective capabilities and efficiency in high-current applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal for the MOSFET. When the MOSFET is on (conducting), current flows from the drain to the source.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET when it is conducting.
The VND5N07TR-E is designed for high-efficiency switching and is commonly used in applications like power management, automotive circuits, and various electronic switching devices.