사양
| 속성 | 가치 |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package | Tube |
| ProductStatus | Obsolete |
| IGBTType | NPT |
| Configuration | Half Bridge |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 80 A |
| Power-Max | 463 W |
| Vce(on)(Max)@VgeIc | 4.91V @ 15V, 80A |
| Current-CollectorCutoff(Max) | 250 µA |
| InputCapacitance(Cies)@Vce | 8.28 nF @ 30 V |
| Input | Standard |
| NTCThermistor | No |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | 12-MTP Module |
