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VSP004N10MS-G
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제조업체 부품 #VSP004N10MS-G
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사양
| 속성 | 가치 |
| Manufacturer | Vergiga |
| Package / Case | PDFN-8(4.9x5.8) |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 3.5mΩ@10V,135A |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) | 135A |
| Number | 1 N-channel |
개요
Description
The VSP004N10MS-G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance and high-speed switching capabilities, making it ideal for use in power supplies, automotive, and industrial circuits. With a voltage rating of 100V and a continuous drain current of up to 4A, this device can efficiently handle significant power loads.
Key specifications include a low R_DS(on) value, which reduces power loss and improves thermal performance, and a fast switching speed that enhances overall efficiency. The VSP004N10MS-G is packaged in a compact TO-220 format, facilitating easy integration into circuits while ensuring effective heat dissipation.
Its reliability and performance make it suitable for both high-frequency and high-voltage applications. Overall, the VSP004N10MS-G is an effective choice for engineers seeking efficient and reliable MOSFET solutions in electronic designs.
Key specifications include a low R_DS(on) value, which reduces power loss and improves thermal performance, and a fast switching speed that enhances overall efficiency. The VSP004N10MS-G is packaged in a compact TO-220 format, facilitating easy integration into circuits while ensuring effective heat dissipation.
Its reliability and performance make it suitable for both high-frequency and high-voltage applications. Overall, the VSP004N10MS-G is an effective choice for engineers seeking efficient and reliable MOSFET solutions in electronic designs.
Equivalent
The VSP004N10MS-G is a high-voltage MOSFET. Equivalent products include the IRF840, STP40NF10, and FQP40N10. Always verify specifications like V_DS, I_D, and R_DS(on) to ensure compatibility for your specific application.
Features
The VSP004N10MS-G is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 4A, facilitating efficient power handling.
3. Low On-Resistance: With a typical R_DS(on) of around 10 mΩ, it ensures minimal power loss during operation.
4. Fast Switching Speed: The MOSFET exhibits low gate charge (Q_g), allowing for rapid switching, which is beneficial in high-frequency applications.
5. Thermal Management: It features a junction-to-ambient thermal resistance (RθJA) that aids in effective heat dissipation.
6. Package Type: Available in a compact surface-mount package (DPAK), making it suitable for space-constrained designs.
These attributes make the VSP004N10MS-G ideal for applications in power supplies, motor drivers, and other electronic circuits requiring efficient switching performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 4A, facilitating efficient power handling.
3. Low On-Resistance: With a typical R_DS(on) of around 10 mΩ, it ensures minimal power loss during operation.
4. Fast Switching Speed: The MOSFET exhibits low gate charge (Q_g), allowing for rapid switching, which is beneficial in high-frequency applications.
5. Thermal Management: It features a junction-to-ambient thermal resistance (RθJA) that aids in effective heat dissipation.
6. Package Type: Available in a compact surface-mount package (DPAK), making it suitable for space-constrained designs.
These attributes make the VSP004N10MS-G ideal for applications in power supplies, motor drivers, and other electronic circuits requiring efficient switching performance.
Pinout
The VSP004N10MS-G is a power MOSFET with a pin count of 4. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage.
2. Drain (D): This pin connects to the load and allows current flow when the MOSFET is turned on.
3. Source (S): This pin connects to the source of the current, completing the circuit with the drain.
4. Bulk (B): Commonly used for internal body diode connection.
The VSP004N10MS-G is optimized for high efficiency and fast switching applications, suitable for DC-DC converters, motor control, and other power management systems. It has a low R_DS(on) for reduced conduction losses and improved thermal performance.
1. Gate (G): This pin controls the MOSFET operation by applying a voltage.
2. Drain (D): This pin connects to the load and allows current flow when the MOSFET is turned on.
3. Source (S): This pin connects to the source of the current, completing the circuit with the drain.
4. Bulk (B): Commonly used for internal body diode connection.
The VSP004N10MS-G is optimized for high efficiency and fast switching applications, suitable for DC-DC converters, motor control, and other power management systems. It has a low R_DS(on) for reduced conduction losses and improved thermal performance.
Manufacturer
The VSP004N10MS-G is manufactured by Vishay Intertechnology, Inc. Vishay is a global company recognized for its production of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and transistors. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, and serves various industries, including automotive, industrial, computing, telecommunications, and consumer electronics.
Vishay is known for its commitment to innovation and quality, providing components that are critical for electronic devices' performance and reliability. The VSP004N10MS-G, specifically, is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. The company's extensive product portfolio and global reach position it as a significant player in the electronic component manufacturing sector.
Vishay is known for its commitment to innovation and quality, providing components that are critical for electronic devices' performance and reliability. The VSP004N10MS-G, specifically, is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. The company's extensive product portfolio and global reach position it as a significant player in the electronic component manufacturing sector.
Application
The VSP004N10MS-G is a high-performance N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: Efficient power conversion in various electronic devices.
2. Motor Control: Driving and controlling motors in industrial and automotive applications.
3. Power Supply Circuits: Enhancing efficiency in switching power supplies.
4. Battery Management Systems: Facilitating power delivery and safety in rechargeable batteries.
5. Consumer Electronics: Used in devices like laptops, smartphones, and appliances for energy-efficient operation.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. DC-DC Converters: Efficient power conversion in various electronic devices.
2. Motor Control: Driving and controlling motors in industrial and automotive applications.
3. Power Supply Circuits: Enhancing efficiency in switching power supplies.
4. Battery Management Systems: Facilitating power delivery and safety in rechargeable batteries.
5. Consumer Electronics: Used in devices like laptops, smartphones, and appliances for energy-efficient operation.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The VSP004N10MS-G is packaged in a TO-220 format, which is a commonly used package type for power MOSFETs, providing efficient thermal management and ease of mounting on PCBs.
