Part A
2N7002,215
넥스페리아 USA 주식회사
- Lifecycle
- Active
- Stock
- 6582 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002VA-7-F is a compatible functional replacement candidate for the 2N7002,215, with both N-channel MOSFETs sharing identical voltage, current, and package characteristics. Designers should validate thermal performance and gate threshold tolerances in their specific application before committing to the substitute.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002VA-7-F
다이오즈(주)
- Lifecycle
- Active
- Stock
- 4202 PCS
- Package
- SOT-666
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002,215 | 2N7002VA-7-F | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the MOSFET can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Defines the maximum steady-state load current the device can carry without overheating. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Lower on-resistance reduces conduction losses and heat generation in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the minimum gate voltage needed to turn the device on; affects logic-level compatibility. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 830 mW | 830 mW | Maximum power the package can dissipate; limits allowable current and thermal design. |
| Package / Mounting | SOT-23 (TO-236AB), Surface Mount | SOT-23, Surface Mount | Footprint and mounting style must match the PCB layout for direct drop-in substitution. |
| Input Capacitance (Ciss) | 50 pF (typ) @ Vds=25V | 50 pF (max) @ Vds=25V | Affects switching speed and gate drive requirements; higher capacitance slows transitions. |
| Operating Junction Temperature Range | -65 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; narrower range may limit use in extreme environments. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002VA-7-F |
|---|---|---|
| Supplier | - | Diodes Incorporated |
| Part Status | Active | Obsolete |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| FET Feature | - | Standard |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 280mA |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 50pF @ 25V |
| Power - Max | - | 150mW |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | TrenchMOS™ | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drive Voltage(Max Rds On Min Rds On) | 10V | - |
| Vgs(Max) | ±30V | - |
| Power Dissipation (Max) | 830mW (Ta) | - |
Frequently asked questions
What are the basic differences between the 2N7002,215 and the 2N7002VA-7-F?
The 2N7002,215 is a single N-channel enhancement-mode MOSFET in a SOT-23 (TO-236AB) package from Nexperia, while the 2N7002VA-7-F is a dual N-channel enhancement-mode MOSFET in a SOT-563 package from Diodes Incorporated. The 2N7002,215 contains one MOSFET, whereas the 2N7002VA-7-F integrates two electrically isolated MOSFETs in a smaller footprint.
Are the 2N7002,215 and 2N7002VA-7-F pin-compatible?
No. The 2N7002,215 uses the standard 3-pin SOT-23 pinout (Gate, Source, Drain), while the 2N7002VA-7-F uses a 6-pin SOT-563 package with two separate MOSFETs. The pin counts, pin functions, and PCB land patterns differ, so they are not drop-in replacements.
What are the voltage and current ratings for each device?
Both devices have a drain-source voltage (VDSS) rating of 60 V. The 2N7002,215 has a continuous drain current (ID) rating of 300 mA at 25°C. The 2N7002VA-7-F has a continuous drain current rating of 280 mA per MOSFET at 25°C. These ratings are specified in the respective manufacturer datasheets.
Can the 2N7002VA-7-F replace two separate 2N7002,215 devices?
In some designs, yes, provided the PCB is redesigned for the SOT-563 footprint and the electrical parameters are validated. The 2N7002VA-7-F provides two isolated MOSFETs in one package, which can replace two 2N7002,215 devices if the lower per-channel current rating (280 mA vs. 300 mA) and thermal considerations are acceptable for the application.
What are the typical on-resistance (RDS(on)) values for these MOSFETs?
The 2N7002,215 specifies a maximum RDS(on) of 5 Ω at VGS = 10 V and ID = 500 mA, and 7.5 Ω at VGS = 4.5 V and ID = 50 mA. The 2N7002VA-7-F specifies a maximum RDS(on) of 5 Ω at VGS = 10 V and ID = 500 mA, and 7.5 Ω at VGS = 4.5 V and ID = 50 mA. These values are from the respective manufacturer datasheets.
What are the gate threshold voltage (VGS(th)) ranges for these devices?
The 2N7002,215 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002VA-7-F has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. Both devices share the same threshold voltage specification window.
Which package is smaller, SOT-23 or SOT-563?
The SOT-563 package used by the 2N7002VA-7-F is smaller than the SOT-23 package used by the 2N7002,215. The SOT-563 typically measures approximately 1.6 mm × 1.6 mm, while the SOT-23 measures approximately 2.9 mm × 1.3 mm. The SOT-563 also has a lower profile, making it suitable for space-constrained designs.
What are the maximum power dissipation ratings for these MOSFETs?
The 2N7002,215 has a total power dissipation rating of 830 mW at Tamb = 25°C. The 2N7002VA-7-F has a total power dissipation rating of 300 mW per device at Tamb = 25°C. The lower power rating of the 2N7002VA-7-F reflects its smaller SOT-563 package and reduced thermal mass.
Are these MOSFETs suitable for logic-level gate drive applications?
Yes. Both the 2N7002,215 and 2N7002VA-7-F are specified with RDS(on) at VGS = 4.5 V, confirming they are intended for logic-level gate drive. They can be driven directly from 5 V or lower logic outputs, provided the gate drive voltage and current requirements of the target circuit are satisfied.