2N7002 vs 2N7002E-T1-E3

2N7002과 2N7002E-T1-E3에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 is a functionally compatible replacement candidate for the 2N7002, sharing the same N-channel enhancement-mode MOSFET architecture, SOT-23 package, and 60 V drain-source rating. Designers should validate gate threshold voltage tolerance and on-resistance at the intended operating point before committing to production, as these parameters may shift switching behavior in sensitive circuits.

Drain-Source Voltage Rating High match
Package Type High match
On-Resistance Validation required
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002

ST마이크로일렉트로닉스(주)

Lifecycle
Active
Stock
1470 PCS
Package
SOT-23
Series
트랜지스터 -FET, MOSFET - 싱글
+BOM 견적 요청(RFQ)

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7002E-T1-E3
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±18V ±20V
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 350mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series STripFET™ -
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