Part A
2N7002ET1G
온세미
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G is a compatible functional replacement candidate for the 2N7002 in most low-power switching applications, with equivalent drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and thermal derating margins against the target circuit before committing to production.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002
ST마이크로일렉트로닉스(주)
- Lifecycle
- Active
- Stock
- 1470 PCS
- Package
- SOT-23
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002 | 2N7002ET1G | Why it matters |
|---|---|---|---|
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | Defines the maximum voltage the MOSFET can block; must match or exceed the circuit rail voltage for safe operation. |
| Continuous Drain Current (ID) | 115 mA | 115 mA | Sets the maximum steady-state load current the device can carry without exceeding thermal limits. |
| Drain-to-Source On-Resistance (RDS(on)) | 7.5 Ω @ VGS = 10 V, ID = 500 mA | 7.5 Ω @ VGS = 10 V, ID = 500 mA | Determines conduction losses; lower RDS(on) means less power dissipation and higher efficiency in switching and load-switch applications. |
| Gate Threshold Voltage (VGS(th)) | 2.1 V max | 2.1 V max | Indicates the gate voltage needed to start conduction; affects compatibility with low-voltage logic drive levels. |
| Gate-Source Voltage (VGS) | ±20 V | ±20 V | Specifies the maximum safe gate drive voltage; exceeding it can damage the gate oxide. |
| Power Dissipation (PD) | 200 mW | 200 mW | Limits how much power the package can dissipate; constrains usable current at a given RDS(on) and ambient temperature. |
| Input Capacitance (Ciss) | 50 pF typ | 50 pF typ | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases dynamic losses. |
| Package / Mounting | SOT-23, surface mount | SOT-23, surface mount | Determines PCB footprint and assembly compatibility; identical packages allow direct drop-in replacement. |
| Channel Type | N-channel enhancement mode | N-channel enhancement mode | Defines polarity and turn-on behavior; must match the circuit topology and gate drive polarity. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002ET1G | 2N7002 |
|---|---|---|
| Part Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 260mA (Ta) | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 240mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.81 nC @ 5 V | 2 nC @ 5 V |
| Vgs(Max) | ±20V | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 26.7 pF @ 25 V | 43 pF @ 25 V |
| Power Dissipation (Max) | 300mW (Tj) | 350mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | STripFET™ |
Frequently asked questions
What are the key differences between the 2N7002 and the 2N7002ET1G?
The 2N7002 is a general-purpose N-channel enhancement-mode MOSFET specified with a maximum drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 115 mA at 25 °C, and a maximum power dissipation of 200 mW in the SOT-23 package. The 2N7002ET1G is an onsemi-specific part number for the same 2N7002 MOSFET family, supplied in the SOT-23 package and typically shipped in tape-and-reel (T1G suffix). Both share the same basic 60 V, 115 mA rating and SOT-23 footprint, but the 2N7002ET1G is a manufacturer-specific ordering code with defined packaging and lot traceability.
Can the 2N7002 and 2N7002ET1G be used interchangeably in a design?
In most cases yes, because both are 60 V, 115 mA N-channel MOSFETs in the SOT-23 package with the same pinout (gate, source, drain). However, substitution should be validated against the specific manufacturer datasheet for each part, since gate threshold voltage (VGS(th)), on-resistance (RDS(on)), and input capacitance can vary slightly between manufacturers and production lots. Always confirm the electrical limits and thermal performance for the target application before replacing one with the other.
What is the maximum drain-source voltage (VDS) rating for these MOSFETs?
Both the 2N7002 and the 2N7002ET1G are rated for a maximum drain-source voltage (VDS) of 60 V. This is a standard parameter for the 2N7002 family and is specified in manufacturer datasheets such as those from onsemi, Nexperia, and Diodes Incorporated.
What is the continuous drain current (ID) rating for the 2N7002 and 2N7002ET1G?
The continuous drain current (ID) rating is typically 115 mA at 25 °C ambient temperature for both the 2N7002 and the 2N7002ET1G in the SOT-23 package. This rating is subject to derating at higher ambient temperatures and depends on the PCB layout and thermal resistance.
What package do the 2N7002 and 2N7002ET1G use?
Both devices are supplied in the SOT-23 (TO-236) surface-mount package. The 2N7002ET1G suffix "T1G" indicates tape-and-reel packaging from onsemi, while the 2N7002 may be available in bulk, tape-and-reel, or other packaging options depending on the manufacturer and distributor.
What is the gate threshold voltage (VGS(th)) for these MOSFETs?
The gate threshold voltage (VGS(th)) for the 2N7002 family is typically specified as a minimum of 0.8 V and a maximum of 1.5 V at VDS = VGS and ID = 250 µA, though exact limits can vary slightly by manufacturer. The 2N7002ET1G follows the same 2N7002 specification. Designers should consult the specific manufacturer datasheet for guaranteed limits.
What is the on-resistance (RDS(on)) of the 2N7002 and 2N7002ET1G?
The on-resistance (RDS(on)) for the 2N7002 family is typically around 1.2 Ω to 7.5 Ω at VGS = 10 V and ID = 500 mA, depending on the manufacturer and test conditions. The 2N7002ET1G uses the same 2N7002 die specification. For precise RDS(on) values, refer to the specific manufacturer datasheet, as process variations can affect this parameter.
Are the 2N7002 and 2N7002ET1G RoHS compliant?
Most modern 2N7002 and 2N7002ET1G parts from major manufacturers such as onsemi, Nexperia, and Diodes Incorporated are RoHS compliant and halogen-free. However, compliance depends on the specific manufacturer and date code. Verify RoHS status on the manufacturer datasheet or distributor product page before use in regulated applications.