2N7002K-7 vs 2N7002ET1G

2N7002K-7과 2N7002ET1G에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002K-7 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. However, designers should verify gate threshold voltage tolerances and RDS(on) characteristics against specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-7 2N7002ET1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 380mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.3 nC @ 4.5 V 0.81 nC @ 5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 26.7 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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