2N7002,215 vs 2N7002K-7

2N7002,215과 2N7002K-7에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type Validation required
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002,215

넥스페리아 USA 주식회사

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
트랜지스터 -FET, MOSFET - 싱글

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002K-7
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 370mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.3 nC @ 4.5 V