Part A
2N7002ET1G
온세미
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-E3 and 2N7002ET1G are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making them viable functional substitutes in most low-power switching applications. Designers should verify gate threshold voltage tolerance and on-resistance characteristics against their specific circuit requirements before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Gate Threshold Voltage
Validation required
Drain-Source On-Resistance
Validation required
Parts at a glance
Part B
2N7002K-T1-E3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 3495 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K-T1-E3 | 2N7002ET1G | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block in the off state; must match or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Determines the maximum load current the MOSFET can carry continuously without exceeding thermal limits. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Lower on-resistance reduces conduction losses and heat dissipation during switching and steady-state operation. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage at which the device begins to conduct; critical for compatibility with logic-level drive circuits. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum allowable gate voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 350 mW | 350 mW | Maximum power the package can dissipate; affects thermal design and continuous current capability. |
| Input Capacitance (Ciss) | 50 pF (typ) | 50 pF (typ) | Influences switching speed and gate drive requirements; higher capacitance slows transitions and increases drive losses. |
| Package / Mounting | SOT-23 (TO-236), Surface Mount | SOT-23 (TO-236), Surface Mount | Footprint and mounting style must match the PCB layout for direct drop-in replacement. |
| Channel Type / Configuration | N-Channel Enhancement Mode | N-Channel Enhancement Mode | Determines polarity and drive requirements; must match circuit topology for functional substitution. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002ET1G | 2N7002K-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 260mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 240mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.81 nC @ 5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 26.7 pF @ 25 V | 30 pF @ 25 V |
| Power Dissipation (Max) | 300mW (Tj) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | TrenchFET® |
Frequently asked questions
What are the key differences between the 2N7002K-T1-E3 and the 2N7002ET1G?
The 2N7002K-T1-E3 is a Vishay Siliconix N-channel MOSFET offered in a SOT-23 package, while the 2N7002ET1G is an onsemi N-channel MOSFET also in a SOT-23 package. Both are logic-level small-signal MOSFETs with similar 60 V drain-source voltage ratings, but they differ in on-resistance, gate threshold voltage range, and input capacitance characteristics as specified in their respective manufacturer datasheets.
Are the 2N7002K-T1-E3 and 2N7002ET1G pin-compatible?
Yes. Both devices use the standard SOT-23 three-lead package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This common pinout allows them to share the same PCB land pattern, but electrical parameter differences must still be evaluated before substitution.
What is the drain-source voltage rating for each device?
Both the 2N7002K-T1-E3 and the 2N7002ET1G have a maximum drain-source voltage (VDS) rating of 60 V, as stated in their respective manufacturer datasheets. This makes them suitable for low-voltage switching applications within that limit.
How do the on-resistance specifications compare between the two parts?
The 2N7002K-T1-E3 specifies a maximum on-resistance (RDS(on)) of approximately 2 ohms at VGS = 10 V, while the 2N7002ET1G specifies a maximum RDS(on) of approximately 1.6 ohms at VGS = 10 V. Actual values should be confirmed against the latest datasheets from Vishay and onsemi, respectively, since specifications may be revised.
Can the 2N7002ET1G be used as a direct drop-in replacement for the 2N7002K-T1-E3?
Because both devices share the same SOT-23 package and pinout, a direct drop-in replacement is physically possible. However, electrical differences such as gate threshold voltage, on-resistance, and input capacitance may affect circuit performance. A design review against both datasheets is required before substituting one for the other.
What are the gate threshold voltage ranges for these MOSFETs?
The 2N7002K-T1-E3 specifies a gate threshold voltage (VGS(th)) range of approximately 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002ET1G specifies a VGS(th) range of approximately 1.0 V to 2.0 V under similar test conditions. Designers should verify these values from the current manufacturer datasheets.
What continuous drain current can each device handle?
Both the 2N7002K-T1-E3 and the 2N7002ET1G are rated for a continuous drain current (ID) of approximately 300 mA at 25°C ambient temperature, with derating at higher temperatures. These are small-signal MOSFETs intended for low-current switching, not power applications.
Do both devices meet the same qualification or compliance standards?
Compliance and qualification details vary by manufacturer. The 2N7002K-T1-E3 is produced by Vishay Siliconix and the 2N7002ET1G by onsemi. Each manufacturer publishes its own reliability, moisture sensitivity level (MSL), and environmental compliance data. Designers should consult the specific manufacturer datasheet and product qualification reports for verified compliance information.