Part A
2N7002ET1G
온세미
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002K and 2N7002ET1G are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002ET1G a viable functional replacement candidate for the 2N7002K in most low-power switching applications. Designers should verify gate threshold voltage tolerance and on-resistance characteristics against their specific circuit requirements before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002K
Rectron 미국
- Lifecycle
- Active
- Stock
- 3271 PCS
- Package
- SOT-23
- Series
- 트랜지스터 -FET, MOSFET - 싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002ET1G | 2N7002K |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 260mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 240mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 1.9V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.81 nC @ 5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 26.7 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 300mW (Tj) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |