2N7002E vs 2N7002LT1G

2N7002E과 2N7002LT1G에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E is a compatible functional replacement candidate for the 2N7002LT1G in most low-power switching applications, with matching drain-source voltage, continuous drain current, and package type. Designers should validate gate threshold voltage tolerance and RDS(on) at the specific drive conditions before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E

파나소닉 전자 부품

Lifecycle
Active
Stock
3552 PCS
Package
SOT-23-3
Series
트랜지스터 -FET, MOSFET - 싱글
+BOM 견적 요청(RFQ)

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002LT1G
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 225mW (Ta)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare 견적 요청(RFQ)