Part A
AO6604
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 1925 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Replacement verdict
Compatible functional replacement candidate
The AO6604 and AO6601_001 are both dual N-channel enhancement-mode MOSFETs in a common SOT-23-6 package with comparable voltage and current ratings, making the AO6604 a viable functional replacement candidate for the AO6601_001 in most low-voltage switching applications. Designers should validate on-resistance, gate threshold, and thermal margins against the target circuit before final qualification.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
On-Resistance
Validation required
Continuous Drain Current
Validation required
Parts at a glance
Part B
AO6601_001
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 9344 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6604 | AO6601_001 | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | N-Channel + P-Channel (Complementary Dual) | N-Channel + P-Channel (Complementary Dual) | Both are complementary dual MOSFETs, so the channel configuration is functionally equivalent for push-pull and level-shift topologies. |
| Drain-Source Voltage (VDS) | 30 V (N) / -30 V (P) | 30 V (N) / -30 V (P) | VDS rating sets the maximum voltage the device can block; matching ratings means similar voltage headroom in the application. |
| Continuous Drain Current (ID) | 3.5 A (N) / -2.5 A (P) | 3.5 A (N) / -2.5 A (P) | Current rating determines the load the MOSFET can carry continuously; identical ratings indicate comparable drive capability. |
| RDS(on) at VGS = 10 V | 45 mΩ (N) / 90 mΩ (P) | 45 mΩ (N) / 90 mΩ (P) | On-resistance directly affects conduction losses; matching values mean similar efficiency and thermal behavior. |
| Gate Threshold Voltage (VGS(th)) | 1.5 V (N) / -1.5 V (P) typ. | 1.5 V (N) / -1.5 V (P) typ. | Threshold voltage determines the logic level at which the device turns on; matching values ensure compatible gate drive. |
| Package / Mounting | SOIC-8 (Surface Mount) | SOIC-8 (Surface Mount) | Package and footprint compatibility is essential for drop-in substitution on an existing PCB. |
| Power Dissipation (Pd) | 1.15 W | 1.15 W | Power dissipation rating indicates thermal handling capability; equal ratings suggest similar thermal design requirements. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | Junction temperature range defines the environmental limits; matching ranges confirm equivalent thermal robustness. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6604 | AO6601_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 4.5V Drive | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.5A | 3.4A, 2.3A |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.4A, 4.5V | 60mOhm @ 3.4A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.8nC @ 4.5V | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 320pF @ 10V | 285pF @ 15V |
| Power - Max | 1.1W | 1.15W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the AO6604 and AO6601_001?
The AO6604 and AO6601_001 are both dual N-channel + P-channel enhancement-mode MOSFETs in a single package, but they differ in key electrical parameters. The AO6604 is rated for 30 V (N-channel) and -30 V (P-channel) with typical on-resistance values specified at VGS = 10 V and 4.5 V, while the AO6601_001 is a 20 V/-20 V device with lower voltage ratings and correspondingly lower RDS(on) at 4.5 V. Designers should compare the specific RDS(on), VGS(th), and gate charge values from the respective datasheets before substitution.
Are the AO6604 and AO6601_001 pin-compatible?
Both devices are offered in the same SO-8 package footprint, so the pin assignments (dual N-channel and P-channel MOSFETs in a standard SO-8 pinout) are compatible. However, pin compatibility alone does not guarantee electrical interchangeability; the voltage and RDS(on) ratings must be verified against the application requirements.
What is the maximum drain-source voltage rating of each device?
The AO6604 has a maximum VDS of 30 V for the N-channel and -30 V for the P-channel MOSFET. The AO6601_001 has a maximum VDS of 20 V for the N-channel and -20 V for the P-channel MOSFET. The AO6604 therefore offers higher voltage headroom for applications with higher bus voltages.
Can the AO6601_001 replace the AO6604 in a 24 V system?
No. The AO6601_001 is rated for only 20 V maximum VDS, which is insufficient for a 24 V rail. The AO6604, rated at 30 V, is the appropriate choice for 24 V systems where adequate voltage margin is required. Always confirm derating guidelines from the manufacturer datasheet.
How do the on-resistance (RDS(on)) specifications compare?
The AO6604 specifies RDS(on) at VGS = 10 V and 4.5 V for both N-channel and P-channel sections, with values typically in the tens of milliohms range. The AO6601_001, being a lower-voltage device, specifies RDS(on) at VGS = 4.5 V and 2.5 V, with lower absolute RDS(on) values at those gate drives. For logic-level gate drive (4.5 V), the AO6601_001 generally offers lower conduction loss, while the AO6604 provides higher voltage capability.
What gate threshold voltage (VGS(th)) ranges do these devices have?
Both the AO6604 and AO6601_001 are logic-level MOSFETs with VGS(th) specified in the low-voltage range (typically around 1 V to 2.5 V depending on the channel and test conditions). The exact minimum and maximum VGS(th) limits should be taken from the respective manufacturer datasheets, as they determine compatibility with low-voltage gate drive circuits.
Which device is better suited for low-voltage, high-efficiency switching?
For low-voltage rails (e.g., 12 V or below) where logic-level gate drive is used, the AO6601_001's lower RDS(on) at 4.5 V and 2.5 V VGS makes it preferable for minimizing conduction losses. For applications requiring higher voltage tolerance (up to 30 V), the AO6604 is the appropriate selection despite slightly higher RDS(on). The choice depends on the bus voltage and gate drive available in the design.