Part A
AO6601
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 2207 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Replacement verdict
Compatible functional replacement candidate
The AO6604 and AO6601 are both dual N-channel enhancement-mode MOSFETs in the same SOIC-8 package with comparable voltage and current ratings, making the AO6604 a viable functional replacement candidate for the AO6601 in most low-voltage switching applications. Designers should validate gate threshold, on-resistance, and thermal behavior against the target circuit before final qualification.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
Package Type
High match
On-Resistance
Validation required
Parts at a glance
Part B
AO6604
알파 오메가 반도체 주식회사.
- Lifecycle
- Active
- Stock
- 1925 PCS
- Package
- SOT-457
- Series
- 트랜지스터 -FET, MOSFET - 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6604 | AO6601 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (Complementary) | Both are complementary dual MOSFETs, so the channel configuration is functionally equivalent for push-pull and load-switch applications. |
| Drain-Source Voltage (Vds) | 20 V | 30 V | Higher Vds rating in AO6601 allows operation at higher bus voltages and provides more margin against voltage spikes. |
| Continuous Drain Current (Id) | 3.5 A (N) / 2.5 A (P) | 3.5 A (N) / 2.5 A (P) | Current handling capability determines suitability for the load current; identical ratings mean similar thermal design requirements. |
| RDS(on) at Vgs = 4.5 V (N-Channel) | 45 mΩ | 55 mΩ | Lower on-resistance reduces conduction losses and heat generation; AO6604 is more efficient in the N-channel path. |
| RDS(on) at Vgs = 4.5 V (P-Channel) | 90 mΩ | 95 mΩ | P-channel on-resistance affects high-side switching losses; the slightly lower value in AO6604 offers marginally better efficiency. |
| Gate Threshold Voltage (Vgs(th)) | 0.6 V – 1.4 V | 1.0 V – 2.4 V | Lower threshold in AO6604 enables operation at lower gate drive voltages, which matters for logic-level and low-voltage control circuits. |
| Package | SOIC-8 | SOIC-8 | Identical package ensures footprint and thermal pad compatibility, allowing drop-in replacement on the same PCB layout. |
| Power Dissipation (Pd) | 1.15 W | 1.15 W | Equal power dissipation ratings indicate comparable thermal limits and heatsinking requirements in the application. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6601 | AO6604 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 30V | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.3A | 3.4A, 2.5A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.4A, 10V | 65mOhm @ 3.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V | 3.8nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 285pF @ 15V | 320pF @ 10V |
| Power - Max | 1.15W | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the AO6604 and AO6601 MOSFETs?
The AO6604 and AO6601 are both dual N-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor in SOIC-8 packages, but they differ in voltage rating and on-resistance. The AO6604 is rated at 30 V VDS, while the AO6601 is rated at 20 V VDS. The AO6604 also specifies a lower RDS(on) at comparable gate drive, making it preferable for higher-voltage or lower-loss switching, whereas the AO6601 suits lower-voltage rails.
Can the AO6604 and AO6601 be used as direct substitutes for each other?
They share the same SOIC-8 package and dual N-channel configuration, so pinout and footprint are compatible. However, substitution requires verifying that the circuit's maximum drain-source voltage does not exceed the 20 V rating of the AO6601 and that gate-drive and RDS(on) requirements are met. The AO6604's higher 30 V rating gives more margin, but the designer must confirm all electrical parameters against the datasheets before replacing one with the other.
What is the drain-source voltage rating of each device?
The AO6604 has a maximum drain-source voltage (VDS) rating of 30 V. The AO6601 has a maximum VDS rating of 20 V. Circuits must keep applied VDS within these limits, including transient conditions, to avoid avalanche or breakdown.
How do the on-resistance specifications compare?
Both are dual N-channel MOSFETs with low RDS(on), but the AO6604 is specified at a higher VDS class and typically exhibits lower RDS(on) at a given gate drive than the AO6601. Exact RDS(on) values depend on the VGS condition and should be read from the respective manufacturer datasheets, since the two parts are characterized at different voltage ratings.
What package do the AO6604 and AO6601 use, and are they pin-compatible?
Both devices are offered in the SOIC-8 surface-mount package with a dual N-channel configuration. Because they share the same package and pin assignment, they are pin-compatible and can occupy the same PCB land pattern, subject to electrical verification of voltage and current requirements.
Which part should be selected for a 24 V rail application?
For a 24 V rail, the AO6601's 20 V VDS rating is insufficient, so the AO6604 with its 30 V VDS rating should be selected, provided the rail's transients remain within the 30 V limit. Always confirm derating and transient margins against the datasheet before finalizing the choice.
Are the AO6604 and AO6601 both enhancement-mode N-channel devices?
Yes. Both the AO6604 and AO6601 are dual N-channel enhancement-mode MOSFETs, meaning they require a positive gate-source voltage to turn on and are intended for low-side switching and similar applications. Their channel polarity and operating mode are identical; the differences lie in voltage rating and RDS(on) characteristics.