Part A
APT30DQ120BG
마이크로칩 기술
- Lifecycle
- Active
- Stock
- 2721 PCS
- Package
- TO-247-2
- Series
- 다이오드 - 정류기 - 단일
Parts at a glance
Part B
APT30GS60KRG
미고삼미 회사
- Lifecycle
- Active
- Stock
- 4233 PCS
- Package
- TO-220-3
- Series
- 트랜지스터 -IGBT-싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ120BG | APT30GS60KRG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Part Status | Active | Obsolete |
| IGBT Type | - | NPT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 54 A |
| Current - Collector Pulsed(Icm) | - | 113 A |
| Vce(on)(Max) @ Vge Ic | - | 3.15V @ 15V, 30A |
| Power - Max | - | 250 W |
| Switching Energy | - | 570µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 145 nC |
| Td(on / off) @ 25°C | - | 16ns/360ns |
| Test Condition | - | 400V, 30A, 9.1Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 320 ns | - |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | - |