Part A
APT30DQ120BG
마이크로칩 기술
- Lifecycle
- Active
- Stock
- 2721 PCS
- Package
- TO-247-2
- Series
- 다이오드 - 정류기 - 단일
Replacement verdict
Not a drop-in replacement
APT30DQ120BG and APT30GT60KRG are not functionally interchangeable: one is a fast-recovery diode and the other an IGBT, so they differ in device type, conduction behavior, and switching characteristics. Substitution would require a full circuit redesign and cannot be treated as a drop-in replacement.
Different device type
Different conduction behavior
Different switching characteristics
Different package and mounting
Parts at a glance
Part B
APT30GT60KRG
미고삼미 회사
- Lifecycle
- Active
- Stock
- 8680 PCS
- Package
- TO-220-3
- Series
- 트랜지스터 -IGBT-싱글
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APT30DQ120BG | APT30GT60KRG | Why it matters |
|---|---|---|---|
| Device Type | Fast Recovery Diode | IGBT | These are fundamentally different device families; a diode and an IGBT are not functionally interchangeable in most circuits. |
| Collector/Forward Current Rating | 30 A (forward) | 60 A (collector) | Current handling capability determines whether the part can carry the load current without overheating. |
| Voltage Rating (Vrrm / Vces) | 1200 V | 600 V | The blocking voltage rating must exceed the peak voltage in the application to avoid breakdown. |
| Package | TO-247 | TO-220 | Package determines footprint, thermal path, and mechanical fit on the PCB or heatsink. |
| Forward Voltage / Vce(sat) | ~3.0 V (forward, at rated current) | ~1.8 V (Vce(sat), at rated current) | Conduction drop affects power loss and efficiency; the IGBT has a lower conduction drop than the diode's forward drop. |
| Switching Behavior | Unidirectional conduction (diode) | Controlled switch (gate-driven) | A diode conducts passively in one direction, while an IGBT requires gate drive and can actively control current flow. |
| Gate Drive Requirement | None | Requires gate voltage (typically 15 V) | The IGBT needs a gate driver circuit, whereas the diode does not, affecting system complexity. |
| Reverse Recovery / Body Diode | Fast recovery diode characteristic | Intrinsic body diode present | Recovery behavior impacts switching losses and EMI in inductive load circuits. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ120BG | APT30GT60KRG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | - | Thunderbolt IGBT® |
| Part Status | Active | Obsolete |
| IGBT Type | - | NPT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 64 A |
| Current - Collector Pulsed(Icm) | - | 110 A |
| Vce(on)(Max) @ Vge Ic | - | 2.5V @ 15V, 30A |
| Power - Max | - | 250 W |
| Switching Energy | - | 525µJ (on), 600µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 145 nC |
| Td(on / off) @ 25°C | - | 12ns/225ns |
| Test Condition | - | 400V, 30A, 10Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 320 ns | - |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | - |
Frequently asked questions
What are the primary differences between the APT30DQ120BG and the APT30GT60KRG?
The APT30DQ120BG is a 1200 V, 30 A ultrafast recovery diode in a TO-247 package, while the APT30GT60KRG is a 600 V, 30 A NPT IGBT in a TO-220 package. They differ in device type, voltage rating, package, and intended function within a circuit.
Can the APT30DQ120BG and APT30GT60KRG be used interchangeably?
No. The APT30DQ120BG is a discrete diode and the APT30GT60KRG is an IGBT; they are different device classes with different terminal functions and switching behavior, so they are not direct substitutes for one another.
What is the voltage and current rating of the APT30DQ120BG?
The APT30DQ120BG is rated for a repetitive peak reverse voltage of 1200 V and an average forward current of 30 A at the specified case temperature, per the manufacturer datasheet.
What is the voltage and current rating of the APT30GT60KRG?
The APT30GT60KRG is rated for a collector-emitter voltage of 600 V and a continuous collector current of 30 A at the specified case temperature, per the manufacturer datasheet.
How do the package types of these two parts differ?
The APT30DQ120BG is supplied in a TO-247 package, while the APT30GT60KRG is supplied in a TO-220 package. The two packages have different footprints, pin arrangements, and thermal characteristics, so PCB land patterns are not interchangeable.
What are the typical application roles of each device?
The APT30DQ120BG, as an ultrafast recovery diode, is typically used for freewheeling, rectification, and snubber functions in high-voltage switching circuits. The APT30GT60KRG, as an NPT IGBT, is typically used as a switching device in motor drives, inverters, and power conversion circuits.
Do these parts share the same manufacturer and technology family?
Both parts are manufactured by Microchip Technology (formerly Microsemi) under the APT brand. However, the APT30DQ120BG belongs to the diode product line, while the APT30GT60KRG belongs to the Non-Punch Through (NPT) IGBT product line, so they are from different technology families.