Part A
IRLML6402TRPBF
인피니티 테크놀로지
- Lifecycle
- Active
- Stock
- 3910 PCS
- Series
- 트랜지스터 -FET, MOSFET - 싱글 FET, MOSFET
Parts at a glance
Part B
IRLML6401TRPBF
인피니티 테크놀로지
- Lifecycle
- Active
- Stock
- 6783 PCS
- Series
- 트랜지스터 -FET, MOSFET - 싱글 FET, MOSFET
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRLML6402TRPBF | IRLML6401TRPBF |
|---|---|---|
| Series | HEXFET® | HEXFET® |
| Part Status | Last Time Buy | Last Time Buy |
| Base Product Number | IRLML6402 | IRLML6401 |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.7A, 4.5V | 50mOhm @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | 15 nC @ 5 V |
| Vgs (Max) | ±12V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 10 V | 830 pF @ 10 V |
| Power Dissipation (Max) | 1.3W (Ta) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | Cut Tape (CT), Tape & Reel (TR) |