BSS83PH6327XTSA1

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BSS83PH6327XTSA1

+BOM

MOSFET P-CH 60V 330MA SOT23-3

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  • 패키지 PG-SOT23-3

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series SIPMOS®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 330mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 330mA, 10V
Vgs(th)(Max) @ Id 2V @ 80µA
Gate Charge(Qg)(Max) @ Vgs 3.57 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 78 pF @ 25 V
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT23

개요

Description

The BSS83PH6327XTSA1 is a P-channel MOSFET from Infineon Technologies, designed for low-voltage applications. Key features include:
- Low threshold voltage (VGS(th)): Suitable for battery-powered devices.
- High efficiency: Low on-resistance (RDS(on)) minimizes power loss.
- Compact package (SC-70-3/SOT-323): Ideal for space-constrained designs.
- Applications: Power management in portable electronics, load switching, and DC-DC converters.
It operates at -20V (VDS) and supports -1.8A (ID), making it versatile for 3V–5V systems. Check the datasheet for detailed specs.

Features

The BSS83PH6327XTSA1 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 85mΩ (max) @ VGS = -10V
- Low Threshold Voltage: -1V (typical) for efficient low-voltage operation
- Fast Switching: Suitable for power management applications
- Package: SOT-23 (Small Outline Transistor), compact and space-saving
- Applications: Load switching, power management, battery protection
This MOSFET is designed for efficiency in low-voltage circuits, offering a balance of performance and compactness.

Pinout

The BSS83PH6327XTSA1 is a P-channel MOSFET in a SOT-23 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Output terminal, connects to the load.
Key Features:
- -30V drain-source voltage (VDS).
- -1.7A continuous drain current (ID).
- Low threshold voltage for efficient switching.
Commonly used in power management, load switching, and DC-DC converters.

Application

The BSS83PH6327XTSA1 is a P-channel MOSFET commonly used in:
- Power Management: Voltage regulation, load switching in portable devices.
- Battery Protection: Reverse polarity and overcurrent protection in battery-powered systems.
- Signal Switching: Low-power signal routing in audio/communication circuits.
- Automotive Electronics: ECU power control, lighting systems.
- Consumer Electronics: Power gating in smartphones, tablets, and wearables.
Its small SOT-23 package and low threshold voltage make it ideal for space-constrained, low-voltage applications.

Package

The BSS83PH6327XTSA1 is a SOT-363 (SC-88) surface-mount package. It's a small, 6-pin plastic package with dimensions of approximately 2.0 x 1.25 x 0.8 mm, commonly used for dual N-channel MOSFETs in space-constrained applications.

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