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C2M0080120D
+BOMSICFET N-CH 1200V 36A TO247-3
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제조업체Wolfspeed, 주식회사.
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제조업체 부품 #C2M0080120D
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데이터시트 C2M0080120D DataSheet
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사양
| 속성 | 가치 |
| Series | C2M™ |
| Part Status | Obsolete |
| Base Product Number | C2M0080120 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 1000 V |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Bulk |
개요
Description
- 1200V voltage rating and 80mΩ on-resistance (RDS(on)), enabling low conduction losses.
- Fast switching performance, reducing switching losses in high-frequency circuits.
- High-temperature operation (up to 175°C), suitable for demanding environments.
- Low gate charge (QG), improving efficiency in power converters.
Common applications include:
- Electric vehicle (EV) charging systems
- Solar inverters
- Industrial power supplies
This MOSFET leverages SiC technology, offering superior performance over traditional silicon-based devices in terms of efficiency, thermal management, and power density.
Pinout
- Pin Count: 4 pins (standard TO-247-4L configuration).
- Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage power terminal.
3. Source (S) – Current return path.
4. Kelvin Source (K) – Separate sense pin for improved gate drive accuracy, reducing switching losses.
Designed for high-efficiency power applications like EV chargers and solar inverters.
Manufacturer
Wolfspeed is a leading U.S.-based semiconductor company specializing in wide-bandgap (SiC & GaN) power and RF solutions. Known for high-performance, energy-efficient components, they serve industries like electric vehicles, renewable energy, and industrial power systems.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating of the C2M0080120D?
A: The C2M0080120D has a Drain to Source Voltage (Vdss) rating of 1200V, suitable for high-voltage applications.
Q: What is the continuous drain current at 25°C for this SiCFET?
A: The continuous drain current (Id) is 36A at a case temperature (Tc) of 25°C.
Q: What is the typical on-resistance (Rds(on)) for this device?
A: The maximum Rds(on) is 98mOhm at Vgs=20V and Id=20A, offering low conduction losses.
Q: What gate drive voltage is recommended for minimal Rds(on)?
A: A drive voltage of 20V is recommended to achieve the specified low Rds(on) performance.
Q: What is the total gate charge (Qg) for switching speed estimation?
A: The typical gate charge (Qg) is 62nC at Vgs=5V, indicating moderate drive requirements for fast switching.
Q: Is this component lead-free and RoHS compliant?
A: Based on provided data, RoHS status is not specified. Please verify with the manufacturer for compliance details.
Q: What is the power dissipation capability of the C2M0080120D?
A: The maximum power dissipation is 192W at case temperature (Tc), requiring adequate thermal management.
