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C2M0280120D
+BOMSICFET N-CH 1200V 10A TO247-3
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제조업체Wolfspeed, 주식회사.
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제조업체 부품 #C2M0280120D
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데이터시트 C2M0280120D DataSheet
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사양
| 속성 | 가치 |
| Series | Z-FET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 6A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 259 pF @ 1000 V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | C2M0280120 |
개요
Description
In general, codes like C2M0280120D might represent a technical component, such as a semiconductor or electronic device, often used in circuit design or manufacturing. These identifiers usually contain information about specifications, such as voltage ratings, size, or compatibility with other components.
If you have a specific field or application in mind (e.g., consumer electronics, automotive parts, etc.), please provide more details for a more tailored response.
Equivalent
Features
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Low On-Resistance: Offers low R_DS(on), enabling reduced conduction losses and improving efficiency.
3. High-Speed Switching: Capable of fast switching speeds, which enhances system performance and reduces heat generation.
4. Thermal Performance: Excellent thermal conductivity allows for effective heat dissipation, improving reliability in demanding environments.
5. Robustness: High ruggedness with capable performance under harsh conditions, suitable for industrial applications.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing designs.
7. Low Gate Charge: Lower gate charge minimizes drive losses and improves switching efficiency.
Overall, the C2M0280120D is ideal for applications such as power supplies, motor drives, and renewable energy systems due to its combination of high efficiency and reliability.
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This pin connects to the output load and is where the current flows out of the device when it is on.
3. Source (S): This pin serves as the return path for the current, connecting to ground or the negative side of the power supply.
Additionally, there may be a thermal pad or mounting features on the package for heat dissipation, but the primary pins relevant for operation are the gate, drain, and source. The C2M0280120D is designed for high-efficiency applications in electric vehicles, renewable energy systems, and industrial motor drives.
Manufacturer
Wolfspeed specializes in high-efficiency power devices, such as MOSFETs and diodes, which are crucial for applications in electric vehicles, renewable energy, and industrial power systems. The C2M0280120D is a SiC MOSFET designed for high-performance applications, offering benefits like reduced energy loss, enhanced thermal performance, and improved reliability compared to traditional silicon-based devices.
As a pioneer in the field, Wolfspeed plays a significant role in advancing the adoption of SiC technology across various industries, contributing to more sustainable and efficient solutions for modern electronic systems. The company’s commitment to research and development positions it at the forefront of the semiconductor market.