사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 3V, 8V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 4A, 8V |
| Vgs(th)(Max) @ Id | 1.55V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.8 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 340 pF @ 12.5 V |
| Power Dissipation (Max) | 2.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-SON |
개요
Equivalent
The CSD16301Q2 is a 30V N-channel NexFET power MOSFET. Equivalent alternatives include:
- TI's CSD17313Q2 (30V, similar specs)
- Infineon's BSC123N08NS3 (30V, comparable performance)
- ON Semiconductor's NTTFS4C30N (30V, low RDS(on))
- Vishay's SiA436DJ (30V, TrenchFET)
Check datasheets for exact compatibility in your application.
- TI's CSD17313Q2 (30V, similar specs)
- Infineon's BSC123N08NS3 (30V, comparable performance)
- ON Semiconductor's NTTFS4C30N (30V, low RDS(on))
- Vishay's SiA436DJ (30V, TrenchFET)
Check datasheets for exact compatibility in your application.
Features
The CSD16301Q2 is a 40V, 60A N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low RDS(on): 1.8 mΩ (max at VGS = 10V) for reduced conduction losses.
- High Current Handling: 60A continuous drain current.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Thermal Performance: Low thermal resistance with a PowerPAD package for improved heat dissipation.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Small Footprint: 5mm x 6mm SON (8-pin) package for space-constrained designs.
Ideal for synchronous rectification, load switches, and power management in automotive, industrial, and computing systems.
- Low RDS(on): 1.8 mΩ (max at VGS = 10V) for reduced conduction losses.
- High Current Handling: 60A continuous drain current.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Thermal Performance: Low thermal resistance with a PowerPAD package for improved heat dissipation.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Small Footprint: 5mm x 6mm SON (8-pin) package for space-constrained designs.
Ideal for synchronous rectification, load switches, and power management in automotive, industrial, and computing systems.
Manufacturer
The CSD16301Q2 is manufactured by Texas Instruments (TI), a leading global semiconductor company. TI designs and produces analog and embedded processing chips for various industries, including automotive, industrial, and consumer electronics. Known for innovation and reliability, TI is a key player in power management and integrated circuit solutions.
Application
The CSD16301Q2 is a 30V, 12A NexFET power MOSFET by Texas Instruments, commonly used in:
1. DC-DC Converters – Efficient power conversion in buck/boost circuits.
2. Power Supplies – Voltage regulation in industrial and telecom systems.
3. Motor Drives – Control in automotive and robotics applications.
4. Load Switches – Fast switching for battery management.
5. Synchronous Rectification – Improves efficiency in SMPS designs.
Its low RDS(on) and compact package (SON 3.3x3.3mm) make it ideal for space-constrained, high-efficiency applications.
1. DC-DC Converters – Efficient power conversion in buck/boost circuits.
2. Power Supplies – Voltage regulation in industrial and telecom systems.
3. Motor Drives – Control in automotive and robotics applications.
4. Load Switches – Fast switching for battery management.
5. Synchronous Rectification – Improves efficiency in SMPS designs.
Its low RDS(on) and compact package (SON 3.3x3.3mm) make it ideal for space-constrained, high-efficiency applications.
