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CSD16323Q3
+BOMMOSFET N-CH 25V 21A/60A 8VSON
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제조업체텍사스 인스트루먼트(주)
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제조업체 부품 #CSD16323Q3
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 25 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 3V, 8V |
| RdsOn(Max)@IdVgs | 4.5mOhm @ 24A, 8V |
| Vgs(th)(Max)@Id | 1.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.4 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 12.5 V |
| PowerDissipation(Max) | 3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (3.3x3.3) |
개요
Features
The CSD16323Q3 is a 30V, 20A N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max at VGS = 10V), reducing conduction losses.
- High Current Handling: 20A continuous drain current.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low Gate Charge (QG): 18 nC (typ), improving switching efficiency.
- Thermal Performance: Low thermal resistance (RθJA = 40°C/W) for better heat dissipation.
- Small Footprint: 5mm × 6mm SON (5x6) package, saving board space.
- AEC-Q101 Qualified: Suitable for automotive applications.
Ideal for synchronous rectification, load switches, and power management in compact designs.
- Low On-Resistance (RDS(on)): 1.8 mΩ (max at VGS = 10V), reducing conduction losses.
- High Current Handling: 20A continuous drain current.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low Gate Charge (QG): 18 nC (typ), improving switching efficiency.
- Thermal Performance: Low thermal resistance (RθJA = 40°C/W) for better heat dissipation.
- Small Footprint: 5mm × 6mm SON (5x6) package, saving board space.
- AEC-Q101 Qualified: Suitable for automotive applications.
Ideal for synchronous rectification, load switches, and power management in compact designs.
Pinout
The CSD16323Q3 is a 12-pin NexFET power MOSFET in a 3mm x 3mm SON package. Key functions:
- Pins 1-4, 9-12 (Drain): Electrically connected for high-current handling.
- Pin 5 (Gate): Controls switching.
- Pin 6 (Source): Output connection.
- Pins 7-8 (Thermal Pad): Improves heat dissipation (must be grounded).
Designed for high-efficiency DC-DC conversion (e.g., POL, servers). Low RDS(on) (1.8mΩ typical) and 30V VDS rating.
- Pins 1-4, 9-12 (Drain): Electrically connected for high-current handling.
- Pin 5 (Gate): Controls switching.
- Pin 6 (Source): Output connection.
- Pins 7-8 (Thermal Pad): Improves heat dissipation (must be grounded).
Designed for high-efficiency DC-DC conversion (e.g., POL, servers). Low RDS(on) (1.8mΩ typical) and 30V VDS rating.
Application
The CSD16323Q3 is a 30V N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets, wearables for efficient power handling.
5. Automotive – Low-voltage applications like infotainment systems.
Its low on-resistance (RDS(on)) and compact package (SON 2x2) make it ideal for space-constrained, high-efficiency designs.
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets, wearables for efficient power handling.
5. Automotive – Low-voltage applications like infotainment systems.
Its low on-resistance (RDS(on)) and compact package (SON 2x2) make it ideal for space-constrained, high-efficiency designs.
