DMN65D8LDW-7

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DMN65D8LDW-7

+BOM

MOSFET 2N-CH 60V 0.18A SOT363

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Part Status Active
Base Product Number DMN65
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 180mA
Rds On (Max) @ Id, Vgs 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Packaging Cut Tape (CT), Tape & Reel (TR)

개요

Description

The DMN65D8LDW-7 is a dual N-channel MOSFET designed for efficient power management in electronic circuits. Manufactured by Diodes Incorporated, this component is part of their extensive product lineup geared towards enhancing performance in compact devices.
Key specifications include a low drain-source on-state resistance, which minimizes power loss and ensures high efficiency. The DMN65D8LDW-7 operates at a maximum drain-source voltage of 60V and can handle a continuous drain current up to 4.3A, making it suitable for various applications such as load switching and DC-DC conversion.
This MOSFET comes in a compact DFN2020-6 package, which is ideal for space-constrained PCBs. The package also offers excellent thermal performance, ensuring reliable operation in demanding environments. With its high-speed switching capabilities and low gate charge, the DMN65D8LDW-7 is designed to optimize power efficiency and enhance the overall performance of electronic systems.
Overall, the DMN65D8LDW-7 is a versatile and efficient component that can be an asset in designing modern electronic devices.

Equivalent

The DMN65D8LDW-7 is a dual N-channel MOSFET. Equivalent products with similar specifications typically include:
1. Nexperia BUK9MNN-65DL
2. ON Semiconductor NTD5804N
3. Infineon BSC067N06LS3G
4. Vishay Si1466DH
These alternatives should have comparable voltage and current ratings, but it's essential to verify specific parameters like Rds(on), Vgs(th), and package type to ensure compatibility with your application.

Features

The DMN65D8LDW-7 is a dual N-channel MOSFET produced by Diodes Incorporated. Key features of this component include:
1. Dual N-Channel MOSFETs: It contains two N-channel MOSFETs in a single package, offering convenience and space-saving on PCBs.
2. Low On-Resistance: The device exhibits low on-resistance, which contributes to enhanced efficiency and reduced power loss.
3. Compact Package: Housed in a small, surface-mountable package, it is suitable for high-density circuit designs.
4. High-Speed Switching: The MOSFETs support fast switching speeds, which is beneficial for applications requiring rapid transitions.
5. Enhancement Mode: These are enhancement-mode MOSFETs, which means they are normally off when the gate-source voltage is zero and turn on when a positive voltage is applied.
6. Thermal Performance: The package design and materials facilitate effective heat dissipation, improving thermal performance.
7. Applications: The DMN65D8LDW-7 is typically used in DC-DC converters, power management, load switching, and other applications where efficient switching is essential.
These features make it suitable for modern electronic applications demanding efficiency and compact design.

Pinout

The DMN65D8LDW-7 is a dual N-channel MOSFET manufactured by Diodes Incorporated. It typically comes in a compact SOT-363 package, which has 6 pins. Here’s a brief overview of its pin configuration and function:
1. Pin Count: 6 pins
2. Function:
- Pins 1 & 4: Source (S1 and S2) - These pins are the source terminals for each N-channel MOSFET.
- Pins 2 & 5: Gate (G1 and G2) - These pins are the gate terminals for controlling each MOSFET.
- Pins 3 & 6: Drain (D1 and D2) - These pins are the drain terminals for each MOSFET.
The DMN65D8LDW-7 is designed for switching applications, providing efficient performance due to its low on-resistance and fast switching speeds. It is commonly used in applications like load switches, power management, and other digital circuits requiring efficient switching.

Manufacturer

The DMN65D8LDW-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on providing innovative solutions for various segments, including consumer electronics, computing, communications, industrial, and automotive markets. Diodes Incorporated is known for its extensive product portfolio, which includes diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers, comparators, Hall-effect and temperature sensors, as well as power management devices, among others.

Application

The DMN65D8LDW-7 is a dual N-channel MOSFET commonly used in power management applications. Its compact size and efficient performance make it suitable for load switching, DC/DC converters, and battery management systems. It's also employed in applications requiring high-speed switching and low power consumption, such as portable electronics, consumer electronics, and communication devices. The component's low on-resistance and high current handling capability make it ideal for use in LED drivers, voltage regulation, and motor control circuits. Additionally, its dual-channel configuration provides design flexibility and space-saving benefits in compact electronic designs.

Package

The DMN65D8LDW-7 is a dual N-channel MOSFET housed in a DFN2020 package. This compact surface-mount package is designed for efficient thermal performance and is suitable for space-constrained applications.

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