사양
| 속성 | 가치 |
| Package / Case | Tube |
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 44A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 67mOhm @ 22A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 4.4mA |
| Gate Charge(Qg)(Max) @ Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3090 pF @ 400 V |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
개요
Description
The FCP067N65S3 is a 650V, 60A N-channel SuperFET III MOSFET from ON Semiconductor, designed for high-efficiency power applications.
### Key Features:
- Low RDS(on): 67mΩ (max) for reduced conduction losses.
- Fast Switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robust Design: Avalanche-rated, improved dv/dt capability, and low gate charge (Qg).
- Package: TO-247, ensuring good thermal performance.
### Applications:
- Switch-mode power supplies (SMPS).
- Industrial motor controls.
- Solar inverters and UPS systems.
This MOSFET combines low switching losses with high reliability, making it suitable for demanding power electronics.
### Key Features:
- Low RDS(on): 67mΩ (max) for reduced conduction losses.
- Fast Switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robust Design: Avalanche-rated, improved dv/dt capability, and low gate charge (Qg).
- Package: TO-247, ensuring good thermal performance.
### Applications:
- Switch-mode power supplies (SMPS).
- Industrial motor controls.
- Solar inverters and UPS systems.
This MOSFET combines low switching losses with high reliability, making it suitable for demanding power electronics.
Features
The FCP067N65S3 is a 650V, 67A N-channel MOSFET from ON Semiconductor, optimized for high-efficiency power applications. Key features:
- Low On-Resistance: 6.7 mΩ (typ.) at 10V, reducing conduction losses.
- Fast Switching: Low gate charge (110 nC) and output capacitance (480 pF), enhancing efficiency in high-frequency circuits.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Low Gate Drive: ±30V max gate-source voltage, compatible with standard drivers.
- SuperJunction Technology: Balances low RDS(on) with fast switching.
- TO-247 Package: High power dissipation capability.
Ideal for SMPS, motor drives, and inverters.
- Low On-Resistance: 6.7 mΩ (typ.) at 10V, reducing conduction losses.
- Fast Switching: Low gate charge (110 nC) and output capacitance (480 pF), enhancing efficiency in high-frequency circuits.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Low Gate Drive: ±30V max gate-source voltage, compatible with standard drivers.
- SuperJunction Technology: Balances low RDS(on) with fast switching.
- TO-247 Package: High power dissipation capability.
Ideal for SMPS, motor drives, and inverters.
Package
The FCP067N65S3 is a 650V, 67mΩ SuperFET III MOSFET from ON Semiconductor, available in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers excellent thermal performance and is commonly used in switching power supplies, motor drives, and industrial applications.
