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FDA38N30
+BOMMOSFET N-CH 300V 38A TO3PN
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제조업체온세미
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제조업체 부품 #FDA38N30
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데이터시트 FDA38N30 DataSheet
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사양
| 속성 | 가치 |
| Series | UniFET™ |
| Part Status | Active |
| Base Product Number | FDA38 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
개요
Description
This MOSFET is often used in power management, motor control, and power supply applications due to its robustness and reliability. It comes in a TO-220 package, which allows for efficient heat dissipation. The design of the FDA38N30 enables it to handle significant power loads while maintaining performance, making it a popular choice for engineers and designers working on projects that require efficient power handling. Its applications range from industrial equipment to consumer electronics, where high efficiency and reliability are crucial.
Equivalent
Features
1. Voltage and Current: It has a drain-source voltage (Vds) of 300V and can handle a continuous drain current (Id) of up to 38A, making it suitable for high-power applications.
2. RDS(on): The on-resistance (RDS(on)) is relatively low, which ensures minimal power loss during operation and enhances efficiency.
3. Package Type: It is typically available in a TO-220 or similar package, which aids in effective heat dissipation.
4. Thermal Performance: The device is designed for good thermal performance, usually featuring a low thermal resistance junction-to-case.
5. Switching Speed: It offers fast switching speeds, beneficial for applications requiring quick response times.
6. Applications: Commonly used in power supplies, motor drives, and other power conversion applications.
7. Protection Features: Often includes built-in protection features like avalanche energy rating, which ensures reliability under extreme conditions.
These features make the FDA38N30 an ideal choice for various high-power and high-efficiency applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This pin is where the main current flows into the MOSFET. It connects to the load.
3. Source (S): This pin serves as the output for the current flowing through the MOSFET. It is often connected to ground in circuit applications.
The FDA38N30 is designed for high-efficiency power management applications, capable of handling high voltages and currents. Its main functions are switching and amplification in electronic circuits, making it suitable for power supply, motor control, and other power management tasks.