사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain(Id) @ 25°C | 28A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 129mOhm @ 14A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2250 pF @ 25 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
개요
Description
The FDB28N30TM is an N-channel MOSFET from ON Semiconductor, designed for high-power applications. Key features include:
- Voltage Rating: 300V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) at 10V VGS
- Fast Switching: Optimized for efficiency in power circuits
- Package: TO-252 (DPAK), suitable for surface mounting
It is commonly used in switching power supplies, motor control, and DC-DC converters, offering robust performance with low conduction losses. The device includes built-in protection against avalanche breakdown and is RoHS compliant.
For detailed specs, refer to the datasheet.
- Voltage Rating: 300V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) at 10V VGS
- Fast Switching: Optimized for efficiency in power circuits
- Package: TO-252 (DPAK), suitable for surface mounting
It is commonly used in switching power supplies, motor control, and DC-DC converters, offering robust performance with low conduction losses. The device includes built-in protection against avalanche breakdown and is RoHS compliant.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the FDB28N30TM (30V, 28A MOSFET) include:
- IRF3205 (55V, 110A) – Higher current/voltage.
- IRL40B209 (40V, 80A) – Lower Rds(on).
- STP80NF55-06 (55V, 80A) – Similar specs.
- AOD4184 (40V, 84A) – Comparable performance.
Check datasheets for exact compatibility in your application.
- IRF3205 (55V, 110A) – Higher current/voltage.
- IRL40B209 (40V, 80A) – Lower Rds(on).
- STP80NF55-06 (55V, 80A) – Similar specs.
- AOD4184 (40V, 84A) – Comparable performance.
Check datasheets for exact compatibility in your application.
Features
The FDB28N30TM is an N-channel MOSFET with the following key features:
- Voltage Rating: 300V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) @ 10V VGS
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 200W (with proper heat sinking)
- Package: TO-247 (3-pin) for robust thermal management
- Applications: Power supplies, motor control, inverters
Designed for high-power switching, it offers a balance of efficiency and durability.
- Voltage Rating: 300V
- Current Rating: 28A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) @ 10V VGS
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 200W (with proper heat sinking)
- Package: TO-247 (3-pin) for robust thermal management
- Applications: Power supplies, motor control, inverters
Designed for high-power switching, it offers a balance of efficiency and durability.
Pinout
The FDB28N30TM is a 30V N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDS: 30V
- ID: 28A (continuous)
- Low RDS(on): ~6.5mΩ (max at VGS=10V)
- Logic-Level Gate Drive (suitable for 5V/10V drive).
Commonly used in power switching, DC-DC converters, and motor control.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDS: 30V
- ID: 28A (continuous)
- Low RDS(on): ~6.5mΩ (max at VGS=10V)
- Logic-Level Gate Drive (suitable for 5V/10V drive).
Commonly used in power switching, DC-DC converters, and motor control.
Application
The FDB28N30TM, a 300V N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/BLDC motors.
3. Lighting Systems – LED drivers, ballast controls.
4. Automotive Electronics – Power distribution, inverters.
5. Industrial Equipment – High-efficiency switching applications.
Its low on-resistance (RDS(on)) and fast switching make it suitable for high-power, high-frequency circuits.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/BLDC motors.
3. Lighting Systems – LED drivers, ballast controls.
4. Automotive Electronics – Power distribution, inverters.
5. Industrial Equipment – High-efficiency switching applications.
Its low on-resistance (RDS(on)) and fast switching make it suitable for high-power, high-frequency circuits.
Package
The FDB28N30TM is a N-channel MOSFET housed in a TO-263 (D2PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in power applications. It features a compact design with a metal tab for heat dissipation, making it suitable for high-current and high-voltage circuits.
