사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Ta), 46A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1230 pF @ 15 V |
| Power Dissipation (Max) | 3.3W (Ta), 56W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
개요
Description
The FDD6690A is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ at VGS = 10 V, reducing conduction losses.
- High Current Handling: Supports up to 62 A continuous drain current (ID).
- Fast Switching: Optimized for applications like DC-DC converters, motor drives, and load switches.
- Robust Voltage Rating: 30 V drain-to-source voltage (VDS), suitable for 12V–24V systems.
- Compact Package: Available in the industry-standard TO-252 (DPAK) for easy PCB mounting.
Common uses include power management in automotive, industrial, and consumer electronics. Its low gate charge (Qg) enhances efficiency in high-frequency circuits. Always refer to the datasheet for detailed specifications and thermal considerations.
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ at VGS = 10 V, reducing conduction losses.
- High Current Handling: Supports up to 62 A continuous drain current (ID).
- Fast Switching: Optimized for applications like DC-DC converters, motor drives, and load switches.
- Robust Voltage Rating: 30 V drain-to-source voltage (VDS), suitable for 12V–24V systems.
- Compact Package: Available in the industry-standard TO-252 (DPAK) for easy PCB mounting.
Common uses include power management in automotive, industrial, and consumer electronics. Its low gate charge (Qg) enhances efficiency in high-frequency circuits. Always refer to the datasheet for detailed specifications and thermal considerations.
Equivalent
Equivalent products to the FDD6690A (N-channel MOSFET, 30V, 60A) include:
- IRL40B209 (30V, 60A)
- AON6660 (30V, 60A)
- SI7860DP (30V, 60A)
- CSD17309Q5A (30V, 60A)
These alternatives offer similar voltage, current ratings, and low RDS(on). Verify pin compatibility and thermal specs for your application.
- IRL40B209 (30V, 60A)
- AON6660 (30V, 60A)
- SI7860DP (30V, 60A)
- CSD17309Q5A (30V, 60A)
These alternatives offer similar voltage, current ratings, and low RDS(on). Verify pin compatibility and thermal specs for your application.
Features
The FDD6690A is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
Its low RDS(on) and high current handling make it ideal for high-performance power systems.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
Its low RDS(on) and high current handling make it ideal for high-performance power systems.
Pinout
The FDD6690A is an N-channel MOSFET with 8 pins (commonly in a Power-8 or SO-8 package).
### Key Functions:
- Drain (D), Gate (G), Source (S): Standard MOSFET terminals for switching high-current loads.
- Low On-Resistance (RDS(on)): ~9.3 mΩ (max) at VGS=10V, enabling efficient power handling.
- High Current Rating: Up to 62A (continuous) at 25°C.
- Voltage Rating: 30V (drain-to-source, VDS).
- Logic-Level Gate Drive: Can be controlled with 4.5V (VGS).
Commonly used in power management, motor control, and DC-DC converters.
### Key Functions:
- Drain (D), Gate (G), Source (S): Standard MOSFET terminals for switching high-current loads.
- Low On-Resistance (RDS(on)): ~9.3 mΩ (max) at VGS=10V, enabling efficient power handling.
- High Current Rating: Up to 62A (continuous) at 25°C.
- Voltage Rating: 30V (drain-to-source, VDS).
- Logic-Level Gate Drive: Can be controlled with 4.5V (VGS).
Commonly used in power management, motor control, and DC-DC converters.
Application
The FDD6690A is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – Driving small motors in appliances or automotive systems.
3. Load Switching – Efficiently switching high-current loads in circuits.
4. Battery Protection – Overcurrent/overvoltage protection in portable devices.
5. LED Drivers – Controlling LED brightness and power.
Its low on-resistance and high current capability make it suitable for compact, energy-efficient designs.
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – Driving small motors in appliances or automotive systems.
3. Load Switching – Efficiently switching high-current loads in circuits.
4. Battery Protection – Overcurrent/overvoltage protection in portable devices.
5. LED Drivers – Controlling LED brightness and power.
Its low on-resistance and high current capability make it suitable for compact, energy-efficient designs.
Package
The FDD6690A is a N-channel MOSFET available in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in power management, switching circuits, and motor control.
