FDMC3612

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FDMC3612

+BOM

MOSFET N-CH 100V 3.3A/16A 8MLP

  • 제조업체온세미

  • 제조업체 부품 #FDMC3612

  • 패키지 WDFN-8

  • 재고1894

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 3.3A (Ta), 16A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 110mOhm @ 3.3A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 21 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 880 pF @ 50 V
Power Dissipation (Max) 2.3W (Ta), 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)

개요

Description

The FDMC3612 is a dual N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management in applications like DC-DC converters, motor control, and load switching.
### Key Features:
- Low On-Resistance (RDS(on)): ~6.3 mΩ (VGS = 10 V) for reduced conduction losses.
- Fast Switching: Optimized for high-frequency operation.
- Low Gate Charge (QG): Enhances efficiency in switching applications.
- Compact Package: Power-33 (3.3x3.3mm) for space-constrained designs.
- Voltage Ratings: 30V drain-source (VDSS), ±20V gate-source (VGS).
### Applications:
- Synchronous buck converters
- Power supplies
- Battery management systems
The FDMC3612 is ideal for high-current, high-efficiency designs, offering a balance of performance and thermal management.

Equivalent

Equivalent products to the FDMC3612 (a 30V P-channel MOSFET) include:
- Si2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401 (Alpha & Omega)
- IRLML6401 (Infineon)
These alternatives offer similar specifications (30V, P-channel, SOT-23 package) and can serve as replacements depending on availability and application requirements. Always verify datasheet parameters for compatibility.

Pinout

The FDMC3612 is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Pins 1, 2, 7, 8 – Drain (D) of both MOSFETs (connected internally).
2. Pins 3, 6 – Gate (G) of MOSFET 1 and MOSFET 2, respectively.
3. Pins 4, 5 – Source (S) of MOSFET 1 and MOSFET 2, respectively.
Key Features:
- 30V drain-source voltage.
- 7.5A continuous drain current per MOSFET.
- Low on-resistance (RDS(on) ~ 12mΩ).
- Optimized for synchronous buck converters and power management.
This compact dual-MOSFET is commonly used in high-efficiency DC-DC converters and load-switching applications.

Application

The FDMC3612 is a dual N-channel MOSFET used in various power management applications. Key areas include:
1. DC-DC Converters – Efficient voltage step-up/down in power supplies.
2. Motor Control – Drives small motors in automotive and industrial systems.
3. Load Switching – Fast on/off switching in battery-powered devices.
4. Synchronous Rectification – Improves efficiency in switching power supplies.
5. Portable Electronics – Power management in smartphones, tablets, and laptops.
Its compact PowerPAK® SC-70 package and low on-resistance make it ideal for space-constrained, high-efficiency designs.

Package

The FDMC3612 is a PowerTrench MOSFET typically available in an SO-8 (SOIC-8) surface-mount package. This compact package is designed for efficient power management and high-density PCB layouts, offering good thermal performance and ease of soldering. The SO-8 is widely used in power electronics applications.

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