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FDN357N
+BOMFDN357N - SMALL SIGNAL FIELD-EFF
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제조업체온세미
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제조업체 부품 #FDN357N
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데이터시트 FDN357N DataSheet
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패키지 SSOT-3
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사양
| 속성 | 가치 |
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 1.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 2.2A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.9 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 235 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
개요
Description
To get precise information about FDN357N, including its objectives, syllabus, prerequisites, and credits, you would need to consult the course catalog of the institution offering it or contact the academic department directly. This will provide insights into the course's focus, whether it involves lectures, seminars, labs, or other instructional methods, and what students can expect to learn and achieve by the end of the course.
Equivalent
1. 2N7002
2. BSS138
3. IRLML6344
4. Si2312
5. AO3400
These alternatives share similar characteristics like voltage rating, current handling, and package type, but exact compatibility should be verified based on specific circuit requirements. Always check the datasheet for each equivalent to ensure it meets your application's specifications.
Features
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of approximately 2.8A.
2. Low On-Resistance: It features a low on-resistance (R_DS(on)) of about 0.05 Ohms, which reduces power loss and enhances efficiency.
3. Fast Switching Speed: The FDN357N is known for its fast switching speed, making it suitable for high-speed applications.
4. Small Package: Typically available in a compact SOT-23 package, it is ideal for space-constrained designs.
5. High Efficiency: The MOSFET's design allows for efficient power management, reducing energy consumption in devices.
6. Thermal Performance: It features good thermal performance to handle power dissipation effectively.
These characteristics make the FDN357N a popular choice in applications such as power management, load switching, and DC-DC converters. Always refer to the datasheet for detailed specifications and guidelines.
Pinout
1. Gate (G): This pin is used to control the conductivity of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows out of the MOSFET when it is turned on.
3. Source (S): This is the pin through which the main current enters the MOSFET.
These pins are usually arranged in a specific order on the SOT-23 package, and the exact pin configuration can be found in the datasheet for the FDN357N. The primary function of the FDN357N is to act as a switch or amplifier in electronic circuits, enabling or controlling the flow of current.