사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 1.7A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 400 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
개요
Equivalent
The FDN5630 is a N-channel MOSFET. Equivalent alternatives include:
- AO3400 (AOS)
- SI2302 (Vishay)
- DMN2305L (Diodes Inc.)
- 2N7002 (generic, slightly different specs)
Check datasheets for exact compatibility in your circuit, focusing on parameters like VDS, ID, and RDS(on).
- AO3400 (AOS)
- SI2302 (Vishay)
- DMN2305L (Diodes Inc.)
- 2N7002 (generic, slightly different specs)
Check datasheets for exact compatibility in your circuit, focusing on parameters like VDS, ID, and RDS(on).
Features
The FDN5630 is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 5.7A (Continuous Drain, ID)
- Low On-Resistance: 28mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V
- Power Dissipation: 2.5W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
Ideal for power management, load switching, and DC-DC conversion in portable electronics.
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 5.7A (Continuous Drain, ID)
- Low On-Resistance: 28mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V
- Power Dissipation: 2.5W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
Ideal for power management, load switching, and DC-DC conversion in portable electronics.
Pinout
The FDN5630 is a N-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-side terminal).
3. Source (S) – Ground/reference terminal.
Key features:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 28mΩ @ VGS=10V)
- Logic-level gate drive (VGS(th) ~1-2.5V)
Commonly used in power switching, load control, and DC-DC conversion.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-side terminal).
3. Source (S) – Ground/reference terminal.
Key features:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 28mΩ @ VGS=10V)
- Logic-level gate drive (VGS(th) ~1-2.5V)
Commonly used in power switching, load control, and DC-DC conversion.
