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FDS4410
+BOMMOSFET N-CH 30V 10A 8SOIC
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제조업체온세미
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제조업체 부품 #FDS4410
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데이터시트 FDS4410 DataSheet
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재고17636
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 13.5mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 31 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1340 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
개요
Description
The course might also incorporate practical and theoretical elements, such as laboratory work, case studies, and discussions on current issues in the food industry. Students could be expected to learn about key methodologies, major trends, and critical challenges in the field. Additionally, the course may serve as a gateway to more advanced topics, preparing students for further study or careers in food science, nutrition, or related areas.
For precise details, such as the syllabus or specific objectives, it would be best to consult the course materials or contact the institution offering the course.
Equivalent
1. IRF9530
2. IRF9540
3. IRF9630
4. SI4410DY
5. NTE2994
These alternatives have similar electrical characteristics, such as voltage and current ratings, but it's essential to verify the specifications match your specific application needs.
Features
1. Low On-Resistance: Offers low R_DS(on), which reduces power losses and improves efficiency in power conversion applications.
2. High Current Capacity: Able to handle significant current loads, making it suitable for demanding power applications.
3. Fast Switching Speed: Enables high-speed operation, critical for applications requiring quick response times.
4. Thermal Performance: Equipped with excellent thermal management properties, allowing it to operate effectively under high temperatures.
5. Compact Package: Typically available in a compact, surface-mount package, which is space-saving and suitable for high-density circuit designs.
6. Robust Design: Provides reliable operation with built-in protection features like ESD protection to enhance durability.
These features make the FDS4410 a versatile choice for applications such as DC-DC converters, power management in portable devices, and other electronic systems requiring efficient power handling.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate regulates the flow of current between the drain and source.
2. Source (S): This pin is the terminal through which current enters the MOSFET. It is typically connected to the ground in many applications involving N-channel MOSFETs.
3. Drain (D): This pin is the terminal through which current exits the MOSFET. It is commonly connected to the load in the circuit.
The FDS4410 is valued for its low on-state resistance and fast switching capability, making it efficient for switching applications.
Manufacturer
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, a company known for its extensive portfolio of energy-efficient innovations. ON Semiconductor provides a wide array of products including power, analog, sensors, and connectivity solutions. This acquisition has allowed ON Semiconductor to enhance its product offerings and expand its reach in the semiconductor market.
Application
1. DC-DC Converters: Utilized in step-down (buck) and step-up (boost) converters for voltage regulation.
2. Load Switching: Ideal for controlling power to various components in a circuit.
3. Motor Control: Applied in driving motors and actuators in automotive and industrial systems.
4. Battery Management: Used in applications for battery protection and charging systems.
5. Consumer Electronics: Integrated into devices for efficient power usage and thermal management.
Its low on-resistance and fast switching speed make it suitable for high-efficiency, compact power applications.