사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 5.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 160mOhm @ 2.8A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.77 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 225 pF @ 50 V |
| Power Dissipation (Max) | 10.42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
개요
Description
The FDT1600N10ALZ is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 160A (pulsed)
- Low On-Resistance (RDS(on)): 1.6mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and consumer electronics. Its low conduction losses and robust thermal performance enhance efficiency in demanding environments.
For detailed specs, refer to the datasheet.
- Voltage Rating: 100V
- Current Rating: 160A (pulsed)
- Low On-Resistance (RDS(on)): 1.6mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: TO-252 (DPAK), suitable for surface-mount designs
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and consumer electronics. Its low conduction losses and robust thermal performance enhance efficiency in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the FDT1600N10ALZ (100V, 160A MOSFET) include:
- IRFB4110PbF (100V, 180A)
- STP160N10F7 (100V, 160A)
- IPP110N10N5 (100V, 110A, lower current but similar voltage)
- AUIRF1404Z (40V, 162A, lower voltage)
Check datasheets for exact compatibility in your application.
- IRFB4110PbF (100V, 180A)
- STP160N10F7 (100V, 160A)
- IPP110N10N5 (100V, 110A, lower current but similar voltage)
- AUIRF1404Z (40V, 162A, lower voltage)
Check datasheets for exact compatibility in your application.
Features
The FDT1600N10ALZ is a 100V N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 160A (continuous)
- Low On-Resistance (RDS(on)): 1.6 mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Energy Rated: Robust against inductive load spikes
- TO-252 (DPAK) Package: Compact, surface-mount design
- Logic-Level Gate Drive: Compatible with 5V drive signals
- Low Gate Charge (Qg): Enhances switching efficiency
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
- Voltage Rating: 100V
- Current Rating: 160A (continuous)
- Low On-Resistance (RDS(on)): 1.6 mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Energy Rated: Robust against inductive load spikes
- TO-252 (DPAK) Package: Compact, surface-mount design
- Logic-Level Gate Drive: Compatible with 5V drive signals
- Low Gate Charge (Qg): Enhances switching efficiency
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
Pinout
The FDT1600N10ALZ is a 100V N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- VDS: 100V
- ID: 160A (pulsed)
- Low RDS(on): 1.6mΩ (max at VGS = 10V)
- Fast switching for power applications like motor drives and DC-DC converters.
Compact and efficient for high-current designs.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- VDS: 100V
- ID: 160A (pulsed)
- Low RDS(on): 1.6mΩ (max at VGS = 10V)
- Fast switching for power applications like motor drives and DC-DC converters.
Compact and efficient for high-current designs.
Package
The FDT1600N10ALZ is a power MOSFET in a TO-263-3 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It features three leads and a tab for heat dissipation, making it suitable for automotive, industrial, and switching power supply uses.
