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FQD19N10TM
+BOMMOSFET N-CH 100V 15.6A DPAK
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제조업체온세미
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제조업체 부품 #FQD19N10TM
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데이터시트 FQD19N10TM DataSheet
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패키지 DPAK-3
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 15.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 7.8A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 780 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
개요
Description
The FQD19N10TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications requiring efficient power management and switching. It is manufactured by ON Semiconductor. The key features of the FQD19N10TM include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 19A, making it suitable for medium to high power applications. The device exhibits low on-resistance, enhancing efficiency by minimizing power loss during operation.
The FQD19N10TM is typically used in power supply circuits, motor controllers, and amplifiers due to its ability to handle high current and voltage levels. It is housed in a TO-252 package, which allows for effective heat dissipation and ease of mounting on printed circuit boards (PCBs). The MOSFET's fast switching speed and rugged durability make it a reliable component in both commercial and industrial electronic designs. Overall, the FQD19N10TM is a versatile and robust solution for applications necessitating reliable switching and amplification.
The FQD19N10TM is typically used in power supply circuits, motor controllers, and amplifiers due to its ability to handle high current and voltage levels. It is housed in a TO-252 package, which allows for effective heat dissipation and ease of mounting on printed circuit boards (PCBs). The MOSFET's fast switching speed and rugged durability make it a reliable component in both commercial and industrial electronic designs. Overall, the FQD19N10TM is a versatile and robust solution for applications necessitating reliable switching and amplification.
Equivalent
The FQD19N10TM is an N-channel MOSFET. Equivalent products include:
1. IRF540N
2. IRF530
3. STP55NF06
4. IRL1004
5. NTE2398
Ensure compatibility by comparing key parameters like voltage rating, current capacity, Rds(on), and package type before substituting.
1. IRF540N
2. IRF530
3. STP55NF06
4. IRL1004
5. NTE2398
Ensure compatibility by comparing key parameters like voltage rating, current capacity, Rds(on), and package type before substituting.
Features
The FQD19N10TM is an N-channel MOSFET part of the automotive-grade MOSFET series. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 100V and can handle a continuous drain current (I_D) of 19A.
2. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. Threshold Voltage: The typical gate threshold voltage (V_GS(th)) is around 2-4V, making it suitable for standard drive voltages.
4. Fast Switching: It offers fast switching capabilities, beneficial for applications requiring quick response times.
5. Automotive Qualification: It meets automotive-grade requirements, ensuring high reliability and robustness for automotive applications.
6. Package Type: The FQD19N10TM is typically available in a DPAK (TO-252) package, which provides good thermal performance and compact size.
These features make it suitable for various applications, including power management, motor drives, and DC-DC converters, especially in automotive environments.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 100V and can handle a continuous drain current (I_D) of 19A.
2. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. Threshold Voltage: The typical gate threshold voltage (V_GS(th)) is around 2-4V, making it suitable for standard drive voltages.
4. Fast Switching: It offers fast switching capabilities, beneficial for applications requiring quick response times.
5. Automotive Qualification: It meets automotive-grade requirements, ensuring high reliability and robustness for automotive applications.
6. Package Type: The FQD19N10TM is typically available in a DPAK (TO-252) package, which provides good thermal performance and compact size.
These features make it suitable for various applications, including power management, motor drives, and DC-DC converters, especially in automotive environments.
Pinout
The FQD19N10TM is an N-channel MOSFET. It typically comes in a TO-252 package, which generally has three pins. The pin functions are as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source.
2. Drain (D): The drain is where the charge carriers leave the MOSFET, often connected to the load.
3. Source (S): The source is where the charge carriers enter the MOSFET.
Additionally, the metal tab in the TO-252 package often serves as an additional connection to the drain, providing better heat dissipation. This MOSFET is used in applications requiring efficient power switching and handling high currents and voltages.
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source.
2. Drain (D): The drain is where the charge carriers leave the MOSFET, often connected to the load.
3. Source (S): The source is where the charge carriers enter the MOSFET.
Additionally, the metal tab in the TO-252 package often serves as an additional connection to the drain, providing better heat dissipation. This MOSFET is used in applications requiring efficient power switching and handling high currents and voltages.
Manufacturer
The FQD19N10TM is manufactured by ON Semiconductor. ON Semiconductor is an American company that specializes in the design, production, and sale of semiconductor components for a wide range of applications. These applications span across various industries, including automotive, communication, computing, consumer electronics, industrial, medical, and military/aerospace sectors. The company offers products such as integrated circuits, power management solutions, sensors, and discrete devices. As a prominent player in the semiconductor industry, ON Semiconductor focuses on energy-efficient innovations and solutions that support sustainable energy use, enhance electronics performance, and enable smart technology advancements.
Application
The FQD19N10TM is an N-channel MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Management: Used in power supplies and converters to regulate voltage and current.
2. Motor Control: Ideal for driving motors in applications requiring precise control.
3. LED Lighting: Used in LED drivers for efficient switching and dimming control.
4. Automotive Systems: Applied in electronic control units where reliability and efficiency are crucial.
5. Battery Protection: Utilized in battery management systems to ensure safe operation.
6. Telecommunications: Used in RF circuits and switching applications for signal management.
1. Power Management: Used in power supplies and converters to regulate voltage and current.
2. Motor Control: Ideal for driving motors in applications requiring precise control.
3. LED Lighting: Used in LED drivers for efficient switching and dimming control.
4. Automotive Systems: Applied in electronic control units where reliability and efficiency are crucial.
5. Battery Protection: Utilized in battery management systems to ensure safe operation.
6. Telecommunications: Used in RF circuits and switching applications for signal management.
Package
The FQD19N10TM is a MOSFET, and its package type is a TO-252, also known as DPAK.
