FQD2N90TM

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FQD2N90TM

+BOM

MOSFET N-CH 900V 1.7A DPAK

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사양

속성 가치
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain(Id) @ 25°C 1.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 7.2Ohm @ 850mA, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

개요

Description

FQD2N90TM is a high‑voltage N‑channel MOSFET (enhancement mode) from Fairchild/Fairchild’s successor (onsemi). It targets switching power electronics, especially high‑voltage applications such as offline power supplies and HV motor drives. Key feature: VDS = 900 V, with rugged switching performance suitable for flyback/buck converters and other high‑voltage topologies. The TM suffix typically indicates a Tape & Reel packaging option. For exact numbers—continuous drain current, on‑resistance (Rds(on)), gate charge, switching speeds, and safe operating area—consult the latest datasheet. Gate drive requires an appropriate voltage (not a logic‑level input) and proper protection; adequate heatsinking may be needed due to power dissipation.

Features

FQD2N90TM is a high‑voltage N‑channel MOSFET. Key features:
- Type: N‑channel enhancement MOSFET
- Voltage rating: 900 V (Vds)
- Continuous drain current: typically around 2 A (depends on package and temp)
- On‑resistance: specified in datasheet (high, as expected for 900 V devices)
- Gate threshold: approximately 2–4 V; Vgs ≈ 10 V recommended for full conduction
- Protection/robustness: avalanche rugged, suitable for high‑voltage switching; intrinsic body diode
- Switching: designed for high‑voltage switching applications (offline SMPS, inverters)
- Packaging: TM suffix denotes tape‑and‑reel version; exact package variants (e.g., TO‑220AB, DPAK) available—verify in datasheet
Note: For exact values (Id, Rds(on), switching times, Qgs, etc.), consult the official datasheet for the precise package version you’re using.

Pinout

- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode MOSFET device (two high-voltage N-channel MOSFETs in one package for switching applications).

Manufacturer

Manufacturer: Fairchild Semiconductor. Fairchild is an American semiconductor company that designs and manufactures integrated circuits and power transistors; it is now part of ON Semiconductor, a global semiconductor manufacturer.

Application

FQD2N90TM is a high-voltage N-channel MOSFET used for switching in power electronics. Typical applications include:
- Offline switch-mode power supplies (PFC and primary-side switching)
- High-voltage DC-DC converters and inverters
- Solar/wind inverters and uninterruptible power supplies (UPS)
- Industrial motor drives and servo drives
- Automotive power electronics (DC–DC and power inverters) within its rating

Package

TO-220AB (through-hole molded plastic package).