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FQP55N10
+BOMMOSFET N-CH 100V 55A TO220-3
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제조업체온세미
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제조업체 부품 #FQP55N10
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데이터시트 FQP55N10 DataSheet
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패키지 TO-220-3
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사양
| 속성 | 가치 |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 27.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2730 pF @ 25 V |
| Power Dissipation (Max) | 155W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
개요
Description
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.028Ω (at VGS = 10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220 (easy to mount on heatsinks)
Common uses include power supplies, motor drivers, and DC-DC converters. Its high current handling and low RDS(on) minimize power losses, improving efficiency. Always ensure proper gate drive (typically 10V) and thermal management for optimal performance.
For detailed specs, refer to the datasheet.
Equivalent
- IRF3205 (55V, 110A) – Lower voltage but higher current.
- IRL40B209 (100V, 40A) – Slightly lower current.
- STP55NF10 (100V, 55A) – Direct alternative.
- IXFH55N10 (100V, 55A) – Similar specs.
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- High Power Handling: Up to 150W
- Avalanche Energy Rated: Enhances ruggedness
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
- Package: TO-220 (through-hole)
Commonly used in power supplies, motor control, and DC-DC converters. Offers a balance of high current capability and low conduction losses.