이미지는 참조용입니다.

FQP7N80C

Name: FQP7N80C
Rating: 4.8 (15 reviews)

+BOM

MOSFET N-CH 800V 6.6A TO220-3

제조업체온세미
제조업체 부품 #FQP7N80C
데이터시트 FQP7N80C DataSheet
패키지 TO-220-3
재고6320

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성	가치
Package / Case	Bulk,Tube
Series	QFET®
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain(Id) @ 25°C	6.6A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V
Rds On(Max) @ Id Vgs	1.9Ohm @ 3.3A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	35 nC @ 10 V
Vgs(Max)	±30V
Input Capacitance(Ciss)(Max) @ Vds	1680 pF @ 25 V
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3

개요

Description

The FQP7N80C is an N-channel MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 800V
- Current Rating: 7A (continuous)
- Low On-Resistance (RDS(on)): ~1.2Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor control.
- Package: TO-220 (through-hole), ensuring good thermal performance.
It is commonly used in AC-DC converters, SMPS (Switched-Mode Power Supplies), and industrial power systems where high breakdown voltage and reliability are critical.
Advantages:
✔ High voltage tolerance
✔ Low gate charge for faster switching
✔ Robust thermal performance
Typical Applications:
- Offline power supplies
- LED drivers
- Electronic ballasts
For detailed specs, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor).

Equivalent

Equivalent products to the FQP7N80C (800V, 7A MOSFET) include:
- IRF840 (500V, 8A) – Lower voltage rating.
- STP7NK80Z (800V, 7A) – Direct alternative.
- IXFH7N80 (800V, 7A) – Similar specs.
- 2SK2837 (800V, 7A) – Comparable performance.
Check datasheets for exact compatibility in your circuit.

Features

The FQP7N80C is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V (drain-to-source, V_DSS)
- Current Rating: 7A (continuous drain current, I_D)
- Low On-Resistance: 1.2Ω (R_DS(on)) at 10V gate drive
- Fast Switching: Low gate charge (Q_g ~ 28nC) for efficient performance
- High Power Handling: 190W power dissipation (P_D)
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-220 (through-hole, easy mounting)
Ideal for switching power supplies, inverters, and motor control due to its high voltage and efficient switching characteristics.

Application

The FQP7N80C, an N-channel MOSFET with 800V voltage rating and 7A current capacity, is commonly used in:
1. Power Supplies – Switch-mode (SMPS), AC-DC converters.
2. Lighting – LED drivers, ballast controls.
3. Motor Control – Inverters, H-bridge circuits.
4. Industrial Applications – High-voltage switching, energy management.
5. Renewable Energy – Solar inverters, power conditioning.
Its high voltage tolerance and efficiency make it suitable for medium-power switching applications.

Package

The FQP7N80C is a MOSFET transistor in a TO-220 package. This package type is through-hole mountable, provides good thermal dissipation, and is commonly used for power applications. It has three leads (Gate, Drain, Source) and a metal tab for heatsink attachment. Suitable for medium to high-power circuits.