사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 7V, 10V |
| Rds On(Max) @ Id Vgs | 1.9mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 3.4V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3770 pF @ 25 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-34 |
개요
Description
The IPC100N04S51R9ATMA1 is a 100V N-channel MOSFET from Infineon’s OptiMOS™ 5 power MOSFET series. Key features include:
- Low on-resistance (RDS(on)): 5.1 mΩ (max) at 10V, enhancing efficiency.
- High current handling: Up to 100A (continuous) for robust power switching.
- Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low gate charge (QG) and fast switching, reducing losses.
- AEC-Q101 qualified for automotive use.
Packaged in a TO-263 (D²PAK), it suits space-constrained designs. Ideal for 48V systems, industrial, and automotive applications.
- Low on-resistance (RDS(on)): 5.1 mΩ (max) at 10V, enhancing efficiency.
- High current handling: Up to 100A (continuous) for robust power switching.
- Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low gate charge (QG) and fast switching, reducing losses.
- AEC-Q101 qualified for automotive use.
Packaged in a TO-263 (D²PAK), it suits space-constrained designs. Ideal for 48V systems, industrial, and automotive applications.
Features
The IPC100N04S5-1R9ATMA1 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 100A (continuous)
- Low On-Resistance (RDS(on)): 1.9mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), surface-mount design
- Gate Charge (QG): Low (~50nC typical) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
- Operating Temperature Range: -55°C to +175°C
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
- Voltage Rating: 40V
- Current Rating: 100A (continuous)
- Low On-Resistance (RDS(on)): 1.9mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), surface-mount design
- Gate Charge (QG): Low (~50nC typical) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
- Operating Temperature Range: -55°C to +175°C
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
Pinout
The IPC100N04S51R9ATMA1 is a 100V N-channel MOSFET in a Power-SO8 (LFPAK) package with 8 pins, though some pins are internally connected for thermal and electrical performance.
Key Functions:
- Pins 1, 2, 3 (Source): Connected to the source terminal.
- Pin 4 (Gate): Control input for switching.
- Pins 5, 6, 7, 8 (Drain): High-current output, internally linked for lower resistance.
Features:
- 100V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
- Optimized for high-speed switching in power applications.
This MOSFET is commonly used in DC-DC converters, motor drives, and power management circuits. The LFPAK package enhances thermal dissipation.
Key Functions:
- Pins 1, 2, 3 (Source): Connected to the source terminal.
- Pin 4 (Gate): Control input for switching.
- Pins 5, 6, 7, 8 (Drain): High-current output, internally linked for lower resistance.
Features:
- 100V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
- Optimized for high-speed switching in power applications.
This MOSFET is commonly used in DC-DC converters, motor drives, and power management circuits. The LFPAK package enhances thermal dissipation.
Package
The IPC100N04S5-1R9ATMA1 is a power MOSFET in a TO-263-7 (D²PAK-7) package. This surface-mount package offers high power dissipation and is commonly used in high-current applications like power supplies and motor control. The "1R9" indicates a 1.9mΩ typical on-resistance (RDS(on)).
