사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | OptiMOS™ |
| Part Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 12.6mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 85µA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3670 pF @ 25 V |
| Power Dissipation (Max) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
개요
Description
The IPD50P04P413ATMA1 is a specific part number for a power MOSFET manufactured by Infineon Technologies. This MOSFET is designed for applications requiring efficient power management, such as in automotive and industrial sectors. It typically features low on-state resistance, which enhances its efficiency by reducing power losses during operation. The IPD50P04P413ATMA1 is built to handle high currents and voltages, making it suitable for high-performance applications. Its robust design ensures reliability and durability under demanding conditions. The MOSFET's small form factor contributes to space-saving in circuit designs, allowing for more compact and efficient electronics. It is part of Infineon's larger portfolio of power semiconductor devices, known for their quality and technological advancement. This component is often used in circuits that require fast switching and efficient power conversion, such as inverters, motor drives, and power supplies. When selecting this MOSFET, engineers consider its electrical characteristics to ensure compatibility with their specific application requirements.
Equivalent
The IPD50P04P413ATMA1 is a power MOSFET produced by Infineon Technologies. Equivalent products would be other P-channel MOSFETs with similar specifications, like voltage and current ratings. Some alternatives might include IRF4905 and FQP27P06, but always check datasheets for precise matching in terms of voltage, current, and other electrical characteristics to ensure compatibility with your application.
Features
The IPD50P04P413ATMA1 is a power MOSFET characterized by its specific features and specifications. It is designed for efficient power management and switching applications. Some key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) and a continuous drain current (I_D) suited for high-performance applications.
2. Low On-Resistance: This component offers low R_DS(on), which minimizes power losses during operation, enhancing efficiency.
3. Fast Switching: The device is optimized for rapid switching, improving performance in high-frequency circuits.
4. Thermal Performance: It is designed to handle thermal stress effectively, often featuring an enhanced package for better heat dissipation.
5. Robustness: The MOSFET is built to withstand high levels of stress, including overvoltage and overcurrent conditions.
6. Applications: Commonly used in power supplies, motor control, and other automotive or industrial applications where efficient power handling is critical.
This MOSFET is part of a range that balances performance with reliability, making it suitable for various demanding electronic applications.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) and a continuous drain current (I_D) suited for high-performance applications.
2. Low On-Resistance: This component offers low R_DS(on), which minimizes power losses during operation, enhancing efficiency.
3. Fast Switching: The device is optimized for rapid switching, improving performance in high-frequency circuits.
4. Thermal Performance: It is designed to handle thermal stress effectively, often featuring an enhanced package for better heat dissipation.
5. Robustness: The MOSFET is built to withstand high levels of stress, including overvoltage and overcurrent conditions.
6. Applications: Commonly used in power supplies, motor control, and other automotive or industrial applications where efficient power handling is critical.
This MOSFET is part of a range that balances performance with reliability, making it suitable for various demanding electronic applications.
Pinout
The IPD50P04P413ATMA1 is a power MOSFET manufactured by Infineon Technologies. It features a package with a standard pin configuration for a MOSFET of its type. Specifically, it typically comes in a TO-252 (DPAK) package, which has three pins. The pin count and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows from the load to the MOSFET.
3. Source (S): The source is the pin through which current exits the MOSFET back to the ground or negative side of the power supply.
These pins are utilized for connecting the MOSFET into a circuit where it acts as a switch or amplifier. The IPD50P04P413ATMA1 is specifically designed for applications requiring efficient power management, such as in automotive or industrial applications.
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows from the load to the MOSFET.
3. Source (S): The source is the pin through which current exits the MOSFET back to the ground or negative side of the power supply.
These pins are utilized for connecting the MOSFET into a circuit where it acts as a switch or amplifier. The IPD50P04P413ATMA1 is specifically designed for applications requiring efficient power management, such as in automotive or industrial applications.
Manufacturer
The IPD50P04P413ATMA1 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial power control, power management and multimarket, and digital security solutions. As a leading semiconductor company, Infineon focuses on innovation and providing solutions for energy efficiency, mobility, and security.
Application
The IPD50P04P413ATMA1 is a power MOSFET that finds application in various areas due to its efficiency and reliability. Common application areas include:
1. Automotive Systems: Used in electric and hybrid vehicles for power management and motor control.
2. Industrial Automation: Employed in motor drives, inverters, and power supply systems.
3. Consumer Electronics: Utilized in power conversion and battery management systems.
4. Renewable Energy: Applied in solar inverters and wind turbine converters.
5. Telecommunications: Used in power amplifiers and base station power supplies.
These applications benefit from its low on-state resistance and high-speed switching capabilities.
1. Automotive Systems: Used in electric and hybrid vehicles for power management and motor control.
2. Industrial Automation: Employed in motor drives, inverters, and power supply systems.
3. Consumer Electronics: Utilized in power conversion and battery management systems.
4. Renewable Energy: Applied in solar inverters and wind turbine converters.
5. Telecommunications: Used in power amplifiers and base station power supplies.
These applications benefit from its low on-state resistance and high-speed switching capabilities.
Package
The IPD50P04P413ATMA1 is a MOSFET from Infineon Technologies, typically used for power management applications. Its package type is TO-252, which is a surface-mount package also known as a DPAK.
