IPT017N12NM6

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IPT017N12NM6

+BOM

  • 제조업체JLCPCB 구성 요소

  • 제조업체 부품 #IPT017N12NM6

  • 재고7011

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Manufacturer JLCPCB Assembly
Package PG-HSOF-8

개요

Description

IPT017N12NM6 is a high-performance, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features a low on-resistance, enabling reduced power loss and improved thermal performance, making it suitable for power management in various electronic devices. With a voltage rating of 1200V and a current rating of up to 17A, this MOSFET is commonly used in power supplies, motor drives, and renewable energy systems such as solar inverters.
The device operates at high frequencies and can handle significant load currents, making it ideal for applications requiring fast switching and high efficiency. Its robust construction and thermal characteristics ensure reliable operation in demanding environments. The IPT017N12NM6 is typically housed in a TO-220 package, facilitating heat dissipation and easy integration into circuit designs. Overall, this MOSFET is a versatile component that enhances the performance and energy efficiency of modern electronic systems.

Equivalent

The IPT017N12NM6 is a MOSFET from Infineon, typically used in power applications. Equivalent products include the IRF3205, STP75NF75, and FQD24N20. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Features

The IPT017N12NM6 is a high-performance N-channel MOSFET designed for various power applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 1200V, making it suitable for high-voltage applications.

2. On-Resistance: Low on-resistance (Rds(on)) typically around 17 mΩ, which minimizes conduction losses and enhances efficiency.
3. Current Rating: It can handle a continuous drain current of up to 17A, providing flexibility in different circuit designs.
4. Gate Threshold Voltage: Features a gate threshold voltage (Vgs(th)) range of 2-4V, allowing for effective switching in low-voltage drive circuits.
5. Fast Switching: Capable of high-speed switching, which is essential for applications like DC-DC converters and inverters.
6. Thermal Performance: Comes in a TO-220 package, ensuring good thermal management with appropriate heatsinking.
7. Applications: Suitable for use in industrial, automotive, and consumer electronic applications.
These features make the IPT017N12NM6 a robust choice for power electronics designs.

Pinout

The IPT017N12NM6 is an N-channel MOSFET from Infineon's CoolMOS™ family, specifically designed for high efficiency and low switching losses in power applications. It features a total of 6 pins.
Pin Count and Functions:
1. Gate (G) - Controls the MOSFET’s on/off state.
2. Drain (D) - The terminal through which the main current flows when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
4. Additional Pins (if applicable) - May include options for monitoring or protection.
This device typically handles high voltage and current levels efficiently, making it suitable for applications like power supplies and converters. Always refer to the specific datasheet for detailed pin configuration and characteristics.

Manufacturer

The IPT017N12NM6 is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in advanced semiconductor solutions, focusing on automotive, industrial, and multi-market applications. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon is known for its innovation in power semiconductors, including MOSFETs, IGBTs, and other components essential for energy efficiency and power management. The company plays a crucial role in the development of technologies for electric vehicles, renewable energy, and smart grid applications, aligning with the global shift towards sustainability and energy efficiency. Infineon is publicly traded and operates on a global scale, serving a diverse range of industries and customers.

Application

The IPT017N12NM6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module used in various applications, including:
1. Industrial Drives: For motor control and variable speed drives.
2. Renewable Energy: In solar inverters and wind turbine systems.
3. Power Supplies: For high-efficiency power conversion in servers and data centers.
4. Electric Vehicles: In traction inverters for electric and hybrid vehicles.
5. Rail Transport: For propulsion systems in electric trains and trams.
Its high current handling and efficiency make it suitable for demanding applications requiring reliable power switching.

Package

The IPT017N12NM6 is housed in a DPAK package type, which is a surface-mount package commonly used for power devices.

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