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IRF3315PBF

Name: IRF3315PBF
Rating: 4.8 (15 reviews)

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MOSFET N-CH 150V 23A TO220AB

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데이터시트 IRF3315PBF DataSheet
패키지 TO-220-3
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사양

속성	가치
Package / Case	Bulk,Tube
Series	HEXFET®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain(Id) @ 25°C	23A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V
Rds On(Max) @ Id Vgs	70mOhm @ 12A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	95 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	1300 pF @ 25 V
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB

개요

Description

The IRF3315PBF is an N-channel power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 150V
- Current Rating: 42A (continuous)
- Low On-Resistance: 36mΩ (max at 10V V_GS)
- Fast Switching: Optimized for speed with low gate charge (110nC typical).
It operates with a gate threshold voltage of 2–4V and is housed in a TO-220AB package for easy mounting. Common uses include power supplies, motor control, and DC-DC converters.
Advantages:
- High current handling
- Low conduction losses
- Robust thermal performance
Ensure proper heat sinking for high-power applications. Check datasheet for detailed specs.

Equivalent

Equivalent products to the IRF3315PBF (N-channel MOSFET, 150V, 42A) include:
- IRF3205PBF (55V, 110A)
- IRF1405PBF (55V, 169A)
- IRL3715PBF (150V, 42A, logic-level)
- STP80NF55-06 (55V, 80A)
- FDP8878 (30V, 118A)
Check voltage/current ratings and pin compatibility before substitution. For exact equivalents, consider IRF3315PbF alternatives from Vishay or Infineon.

Features

The IRF3315PBF is a power MOSFET with the following key features:
- Voltage Rating: 150V
- Current Rating: 42A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Avalanche Rated: Robust against inductive load spikes
- Package: TO-220AB (through-hole, easy mounting)
- Gate Charge (Qg): 78nC (typical) for efficient drive
- Low Gate Threshold (VGS(th)): 2-4V
Ideal for power supplies, motor control, and DC-DC converters.

Pinout

The IRF3315PBF is a Power MOSFET in a TO-220AB package with 3 pins:
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal (low-voltage side).
Key Features:
- N-channel MOSFET
- V_DS: 150V
- I_D: 42A (continuous)
- R_DS(on): 0.045Ω (max at V_GS=10V)
Commonly used in power switching, motor control, and DC-DC converters.

Manufacturer

The IRF3315PBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance MOSFETs, microcontrollers, and sensors. The company was formerly part of Siemens before becoming independent in 1999.
The IRF3315PBF is a power MOSFET designed for efficient switching applications, commonly used in industrial, automotive, and consumer electronics. Infineon's products are widely trusted for reliability and innovation in power management.

Application

The IRF3315PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. LED Lighting – Powers and controls LED drivers for high-efficiency lighting.
4. DC-DC Converters – Steps up or down voltage in battery-operated devices.
5. Solar Inverters – Converts DC to AC in renewable energy systems.
Its low on-resistance (RDS(on)) and high current handling (up to 42A) make it ideal for high-power, high-efficiency applications.

Package

The IRF3315PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. It features three leads (Gate, Drain, Source) and is suitable for high-current, high-voltage switching. The TO-220AB package ensures efficient heat dissipation, making it ideal for power management circuits.